IRLML6246TRPBF vs IRLML2030TRPBF 对比
详细并排对比 IRLML6246TRPBF 出自 Infineon 和 IRLML2030TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRLML6246TRPBF | IRLML2030TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.11 | $0.14 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Part Number | IRLML6246TRPBF | IRLML2030TRPBF |
| Technology | IR MOSFET (HEXFET Power MOSFET) | HEXFET (IR MOSFET) |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 20 V | — |
| Continuous Drain Current (ID) at Ta=25C | 4.1 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed value] | — |
| On-Resistance RDS(on) max @ VGS=4.5V | 46 mOhm | 154 mOhm |
| On-Resistance RDS(on) max @ VGS=2.5V | [DATA_NEEDED: RDS(on) at 2.5V] | — |
| Gate Threshold Voltage VGS(th) typ | 1.1 V (logic-level) | — |
| Gate Charge Qg typ | [DATA_NEEDED: Qg total gate charge] | — |
| Power Dissipation (Ta=25C) | 1.3 W | — |
| 工作温度范围 | -55C to +150C (junction) | — |
| 封装 | SOT-23 (Micro3) | Micro3 (SOT-23) |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS Compliance | Yes (Pb-free) | Yes (lead-free, halogen-free) |
| 无卤 | Yes | — |
| MSL 等级 | MSL1 (per JEDEC J-STD-020) | MSL 1 |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta | — | 2.7 A |
| Power Dissipation (PD) at Ta | — | 1.3 W |
| On-Resistance RDS(on) max @ VGS=10V | — | 100 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Charge (Qg) typ | — | 1.0 nC |
| 工作温度 | — | -55C to +150C (junction) |
| Qualification | — | JEDEC standard |
| Soldering | — | Wave-solder compatible |