IRLR3114ZTRPBF vs IRLR7843TRPBF Vergleich
Detaillierter Direktvergleich von IRLR3114ZTRPBF von Infineon und IRLR7843TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRLR3114ZTRPBF | IRLR7843TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,46 | $0,48 |
| Transistortyp | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET) | HEXFET |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc=25 C) | 42 A | — |
| Continuous Drain Current (ID, Tc=100 C) | 30 A | — |
| Pulsed Drain Current (IDM) | 130 A | — |
| Gate-Source Voltage (VGS) max | 16 V | — |
| Gate Threshold Voltage (VGS(th)) | 2.5 V (typ) | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.5 mOhm | — |
| On-Resistance RDS(on) @ VGS=4.5V | 4.9 mOhm | — |
| Total Gate Charge (Qg) | 40 nC @ VGS=4.5 V | 34 nC |
| Input Capacitance (Ciss) | 3.81 nF | — |
| Power Dissipation (Pd, Tc=25 C) | 140 W | — |
| Betriebs-Sperrschichttemperatur | -55 C to +175 C | — |
| Gehäuse | TO-252AA (DPAK) surface mount | TO-252AA (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| Anzahl der Pins | 3 (2 + tab) | — |
| RoHS-Status | Compliant | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 30 V |
| Continuous Drain Current (Id) @ Tc=25C | — | 161 A |
| Power Dissipation (Pd) @ Tc=25C | — | 140 W |
| On-Resistance Rds(on) Max @ Vgs=10V | — | 3.3 mOhm |
| On-Resistance Rds(on) Max @ Vgs=4.5V | — | 4.5 mOhm (typ) |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Gate-to-Source Voltage Max | — | ±20 V |
| Avalanche Energy (Eas) | — | Fully characterized |
| Betriebstemperaturbereich | — | -55C to +175C |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |