IRLR3114ZTRPBF vs IRLR7843TRPBF 对比
详细并排对比 IRLR3114ZTRPBF 出自 Infineon 和 IRLR7843TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRLR3114ZTRPBF | IRLR7843TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.46 | $0.48 |
| 晶体管类型 | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET) | HEXFET |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc=25 C) | 42 A | — |
| Continuous Drain Current (ID, Tc=100 C) | 30 A | — |
| Pulsed Drain Current (IDM) | 130 A | — |
| Gate-Source Voltage (VGS) max | 16 V | — |
| Gate Threshold Voltage (VGS(th)) | 2.5 V (typ) | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.5 mOhm | — |
| On-Resistance RDS(on) @ VGS=4.5V | 4.9 mOhm | — |
| Total Gate Charge (Qg) | 40 nC @ VGS=4.5 V | 34 nC |
| Input Capacitance (Ciss) | 3.81 nF | — |
| Power Dissipation (Pd, Tc=25 C) | 140 W | — |
| 工作结温 | -55 C to +175 C | — |
| 封装 | TO-252AA (DPAK) surface mount | TO-252AA (DPAK) |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数 | 3 (2 + tab) | — |
| RoHS 状态 | Compliant | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 30 V |
| Continuous Drain Current (Id) @ Tc=25C | — | 161 A |
| Power Dissipation (Pd) @ Tc=25C | — | 140 W |
| On-Resistance Rds(on) Max @ Vgs=10V | — | 3.3 mOhm |
| On-Resistance Rds(on) Max @ Vgs=4.5V | — | 4.5 mOhm (typ) |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Gate-to-Source Voltage Max | — | ±20 V |
| Avalanche Energy (Eas) | — | Fully characterized |
| 工作温度范围 | — | -55C to +175C |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |