IRLR3410TRLPBF vs IAUC100N10S5N040ATMA1 Vergleich
Detaillierter Direktvergleich von IRLR3410TRLPBF von Infineon und IAUC100N10S5N040ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC100N10S5N040ATMA1 - 100V 4mΩ 100A OptiMOS-5 N-MOSFET | Infineon
IAUC100N10S5N040ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IRLR3410TRLPBF | IAUC100N10S5N040ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,65 | $1,62 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRLR3410TRLPBF | — |
| Technology | HEXFET (5th generation) N-Channel MOSFET | OptiMOS-5 |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TC=25C | 17 A | — |
| Pulsed Drain Current (IDM) | 60 A | 400 A |
| On-Resistance RDS(on) max @ VGS=10V | 105 mOhm | — |
| On-Resistance RDS(on) max @ VGS=5V | [DATA_NEEDED: RDS(on) @ VGS=5V] | — |
| Gate-Source Threshold VGS(th) typ | 2.0 V | — |
| Total Gate Charge (Qg) | 22.7 nC | [DATA_NEEDED: Qg value] |
| Gate Drive Level | Logic level (5V capable) | — |
| Power Dissipation (PD) at TC=25C | 79 W | — |
| Betriebs-Sperrschichttemperatur | -55C to +175C | — |
| Gehäuse | TO-252AA (DPAK), surface mount | PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount |
| Montageart | Surface Mount (tape and reel) | Surface Mount |
| RoHS Compliance | Compliant (Pb-free) | — |
| MSL-Level | 1 | MSL1 (up to 260C peak reflow) |
| Avalanche Rated | Yes (UIS tested) | — |
| FET Type | — | N-Channel, Enhancement Mode |
| Continuous Drain Current (ID) @ TC=25C | — | 100 A (package-limited) |
| RDS(on) max @ VGS=10V | — | 4 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Maximum Power Dissipation (PD) | — | 167 W @ TC=25C |
| Thermal Resistance, Junction-to-Case (RthJC) | — | 0.9 K/W |
| Betriebstemperaturbereich | — | -55C to +175C (junction) |
| Automotive Qualification | — | AEC-Q100 qualified |
| Avalanche Rating | — | 100% Avalanche tested |
| AOI Compatibility | — | Feasible for Automatic Optical Inspection |
| RoHS-Status | — | Compliant |