IRLR3410TRLPBF vs IAUC100N10S5N040ATMA1 Comparison

Detailed side-by-side comparison of IRLR3410TRLPBF by Infineon and IAUC100N10S5N040ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRLR3410TRLPBF IAUC100N10S5N040ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRLR3410TRLPBF —
Technology HEXFET (5th generation) N-Channel MOSFET OptiMOS-5
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at TC=25C 17 A —
Pulsed Drain Current (IDM) 60 A 400 A
On-Resistance RDS(on) max @ VGS=10V 105 mOhm —
On-Resistance RDS(on) max @ VGS=5V [DATA_NEEDED: RDS(on) @ VGS=5V] —
Gate-Source Threshold VGS(th) typ 2.0 V —
Total Gate Charge (Qg) 22.7 nC [DATA_NEEDED: Qg value]
Gate Drive Level Logic level (5V capable) —
Power Dissipation (PD) at TC=25C 79 W —
Operating Junction Temperature -55C to +175C —
Package TO-252AA (DPAK), surface mount PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount
Mounting Type Surface Mount (tape and reel) Surface Mount
RoHS Compliance Compliant (Pb-free) —
MSL Level 1 MSL1 (up to 260C peak reflow)
Avalanche Rated Yes (UIS tested) —
FET Type — N-Channel, Enhancement Mode
Continuous Drain Current (ID) @ TC=25C — 100 A (package-limited)
RDS(on) max @ VGS=10V — 4 mΩ
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Maximum Power Dissipation (PD) — 167 W @ TC=25C
Thermal Resistance, Junction-to-Case (RthJC) — 0.9 K/W
Operating Temperature Range — -55C to +175C (junction)
Automotive Qualification — AEC-Q100 qualified
Avalanche Rating — 100% Avalanche tested
AOI Compatibility — Feasible for Automatic Optical Inspection
RoHS Status — Compliant

Datasheets & Resources

Browse All Products Create BOM Request Quote