IRLR3410TRLPBF vs IAUC100N10S5N040ATMA1 对比
详细并排对比 IRLR3410TRLPBF 出自 Infineon 和 IAUC100N10S5N040ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IAUC100N10S5N040ATMA1 - 100V 4mΩ 100A OptiMOS-5 N-MOSFET | Infineon
IAUC100N10S5N040ATMA1 ✓ 量产中规格对比
| 参数 | IRLR3410TRLPBF | IAUC100N10S5N040ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.65 | $1.62 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRLR3410TRLPBF | — |
| Technology | HEXFET (5th generation) N-Channel MOSFET | OptiMOS-5 |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TC=25C | 17 A | — |
| Pulsed Drain Current (IDM) | 60 A | 400 A |
| On-Resistance RDS(on) max @ VGS=10V | 105 mOhm | — |
| On-Resistance RDS(on) max @ VGS=5V | [DATA_NEEDED: RDS(on) @ VGS=5V] | — |
| Gate-Source Threshold VGS(th) typ | 2.0 V | — |
| Total Gate Charge (Qg) | 22.7 nC | [DATA_NEEDED: Qg value] |
| Gate Drive Level | Logic level (5V capable) | — |
| Power Dissipation (PD) at TC=25C | 79 W | — |
| 工作结温 | -55C to +175C | — |
| 封装 | TO-252AA (DPAK), surface mount | PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount |
| 安装类型 | Surface Mount (tape and reel) | Surface Mount |
| RoHS Compliance | Compliant (Pb-free) | — |
| MSL 等级 | 1 | MSL1 (up to 260C peak reflow) |
| Avalanche Rated | Yes (UIS tested) | — |
| FET Type | — | N-Channel, Enhancement Mode |
| Continuous Drain Current (ID) @ TC=25C | — | 100 A (package-limited) |
| RDS(on) max @ VGS=10V | — | 4 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Maximum Power Dissipation (PD) | — | 167 W @ TC=25C |
| Thermal Resistance, Junction-to-Case (RthJC) | — | 0.9 K/W |
| 工作温度范围 | — | -55C to +175C (junction) |
| Automotive Qualification | — | AEC-Q100 qualified |
| Avalanche Rating | — | 100% Avalanche tested |
| AOI Compatibility | — | Feasible for Automatic Optical Inspection |
| RoHS 状态 | — | Compliant |