IRLS3034TRLPBF vs IRFZ44NSTRLPBF Vergleich
Detaillierter Direktvergleich von IRLS3034TRLPBF von Infineon und IRFZ44NSTRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRLS3034TRLPBF | IRFZ44NSTRLPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,55 | $0,93 |
| FET Type | N-Channel MOSFET, Metal Oxide | — |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC=25°C | 195 A | — |
| Pulsed Drain Current (IDM) | 343 A | [DATA_NEEDED: pulsed drain current] |
| RDS(on) Max at VGS=10V, ID=195A | 1.7 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 2.5 V (typical) | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | 108 nC | 42 nC |
| Power Dissipation (PD) at TC=25°C | 375 W | — |
| Betriebstemperaturbereich | -40°C to +175°C (TJ) | -55C to +175C |
| Gehäuse | D2PAK (TO-263), Surface Mount | D2PAK (TO-263) |
| Montageart | Surface Mount | Surface Mount |
| Technology | IR HEXFET (planar N-channel) | HEXFET |
| Lead-Free | Yes (PBF suffix) | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 (per JEDEC J-STD-020) | — |
| Shipping Format | Tape and Reel, 7-inch (TRL) | — |
| Polarity | — | N-Channel |
| MOSFET Operating Mode | — | Enhancement |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at TC | — | 49 A |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Drain-Source On-Resistance RDS(on) max | — | 17.5 mOhm at VGS=10V |
| Power Dissipation (TC) | — | 94 W |
| Power Dissipation (TA) | — | 3.8 W |
| Lead-Free (PBF suffix) | — | Yes |