IRLS3034TRLPBF vs IRFZ44NSTRLPBF Comparison

Detailed side-by-side comparison of IRLS3034TRLPBF by Infineon and IRFZ44NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRLS3034TRLPBF IRFZ44NSTRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.55 $0.93
FET Type N-Channel MOSFET, Metal Oxide β€”
Drain-to-Source Voltage (VDS) 40 V β€”
Continuous Drain Current (ID) at TC=25Β°C 195 A β€”
Pulsed Drain Current (IDM) 343 A [DATA_NEEDED: pulsed drain current]
RDS(on) Max at VGS=10V, ID=195A 1.7 mΞ© β€”
Gate Threshold Voltage (VGS(th)) 2.5 V (typical) [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Qg) 108 nC 42 nC
Power Dissipation (PD) at TC=25Β°C 375 W β€”
Operating Temperature Range -40Β°C to +175Β°C (TJ) -55C to +175C
Package D2PAK (TO-263), Surface Mount D2PAK (TO-263)
Mounting Type Surface Mount Surface Mount
Technology IR HEXFET (planar N-channel) HEXFET
Lead-Free Yes (PBF suffix) β€”
RoHS Status Compliant Compliant
MSL Level 1 (per JEDEC J-STD-020) β€”
Shipping Format Tape and Reel, 7-inch (TRL) β€”
Polarity β€” N-Channel
MOSFET Operating Mode β€” Enhancement
Drain-Source Voltage (VDS) β€” 55 V
Continuous Drain Current (ID) at TC β€” 49 A
Gate-Source Voltage (VGS) max β€” Β±20 V
Drain-Source On-Resistance RDS(on) max β€” 17.5 mOhm at VGS=10V
Power Dissipation (TC) β€” 94 W
Power Dissipation (TA) β€” 3.8 W
Lead-Free (PBF suffix) β€” Yes

Datasheets & Resources

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