IRLS3034TRLPBF vs IRFZ44NSTRLPBF Comparación
Comparación detallada lado a lado de IRLS3034TRLPBF por Infineon y IRFZ44NSTRLPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRLS3034TRLPBF | IRFZ44NSTRLPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,55 | $0,93 |
| FET Type | N-Channel MOSFET, Metal Oxide | — |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC=25°C | 195 A | — |
| Pulsed Drain Current (IDM) | 343 A | [DATA_NEEDED: pulsed drain current] |
| RDS(on) Max at VGS=10V, ID=195A | 1.7 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 2.5 V (typical) | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | 108 nC | 42 nC |
| Power Dissipation (PD) at TC=25°C | 375 W | — |
| Rango de temperatura de funcionamiento | -40°C to +175°C (TJ) | -55C to +175C |
| Encapsulado | D2PAK (TO-263), Surface Mount | D2PAK (TO-263) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | IR HEXFET (planar N-channel) | HEXFET |
| Lead-Free | Yes (PBF suffix) | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | 1 (per JEDEC J-STD-020) | — |
| Shipping Format | Tape and Reel, 7-inch (TRL) | — |
| Polarity | — | N-Channel |
| MOSFET Operating Mode | — | Enhancement |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at TC | — | 49 A |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Drain-Source On-Resistance RDS(on) max | — | 17.5 mOhm at VGS=10V |
| Power Dissipation (TC) | — | 94 W |
| Power Dissipation (TA) | — | 3.8 W |
| Lead-Free (PBF suffix) | — | Yes |