IRLZ44ZPBF vs IRLZ44NPBF Vergleich
Detaillierter Direktvergleich von IRLZ44ZPBF von Infineon und IRLZ44NPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRLZ44ZPBF | IRLZ44NPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,15 | $0,68 |
| Manufacturer | Infineon (formerly International Rectifier) | — |
| Part Number | IRLZ44ZPBF | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 55 V | 55 V |
| Continuous Drain Current (ID) | 51 A | — |
| RDS(on) Max @ VGS=10V | 13.5 mOhm | — |
| RDS(on) Max @ VGS=4.5V | 22 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V | 1.0 V to 2.0 V (typ 1.5 V) |
| Total Gate Charge (Qg) | 24 nC | 32 nC |
| Betriebstemperaturbereich | -55C to +175C | — |
| Maximum Junction Temperature | 175 C | — |
| Power Dissipation (PD) | 80 W | — |
| Gehäuse | TO-220AB | TO-220AB (through-hole, 3 leads) |
| Montageart | Through-Hole | Through Hole |
| Gate Drive Level | Logic-Level (4.5V to 10V) | — |
| Technology | HEXFET | HEXFET (advanced process) |
| Qualification | Automotive (per manufacturer description) | — |
| RoHS-Status | Compliant | Compliant |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC=25°C | — | 47 A |
| Pulsed Drain Current (IDM) | — | 160 A |
| Gate-to-Source Voltage (VGS) Max | — | ±16 V |
| Static Drain-to-Source On-Resistance (RDS(on)) | — | 22 mΩ max at VGS=5V, ID=25A |
| Power Dissipation (PD) at TC=25°C | — | 110 W |
| Power Dissipation (PD) at TA=25°C | — | 3.8 W |
| Betriebs-Sperrschichttemperatur | — | -55 °C to +175 °C |
| Thermal Resistance Junction-to-Case (RθJC) | — | 1.4 °C/W |
| Logic-Level Gate Drive | — | Yes (fully enhanced at VGS=5V) |