IRLZ44ZPBF vs IRLZ44NPBF 对比
详细并排对比 IRLZ44ZPBF 出自 Infineon 和 IRLZ44NPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRLZ44ZPBF | IRLZ44NPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.15 | $0.68 |
| Manufacturer | Infineon (formerly International Rectifier) | — |
| Part Number | IRLZ44ZPBF | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 55 V | 55 V |
| Continuous Drain Current (ID) | 51 A | — |
| RDS(on) Max @ VGS=10V | 13.5 mOhm | — |
| RDS(on) Max @ VGS=4.5V | 22 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V | 1.0 V to 2.0 V (typ 1.5 V) |
| Total Gate Charge (Qg) | 24 nC | 32 nC |
| 工作温度范围 | -55C to +175C | — |
| Maximum Junction Temperature | 175 C | — |
| Power Dissipation (PD) | 80 W | — |
| 封装 | TO-220AB | TO-220AB (through-hole, 3 leads) |
| 安装类型 | Through-Hole | Through Hole |
| Gate Drive Level | Logic-Level (4.5V to 10V) | — |
| Technology | HEXFET | HEXFET (advanced process) |
| Qualification | Automotive (per manufacturer description) | — |
| RoHS 状态 | Compliant | Compliant |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC=25°C | — | 47 A |
| Pulsed Drain Current (IDM) | — | 160 A |
| Gate-to-Source Voltage (VGS) Max | — | ±16 V |
| Static Drain-to-Source On-Resistance (RDS(on)) | — | 22 mΩ max at VGS=5V, ID=25A |
| Power Dissipation (PD) at TC=25°C | — | 110 W |
| Power Dissipation (PD) at TA=25°C | — | 3.8 W |
| 工作结温 | — | -55 °C to +175 °C |
| Thermal Resistance Junction-to-Case (RθJC) | — | 1.4 °C/W |
| Logic-Level Gate Drive | — | Yes (fully enhanced at VGS=5V) |