IRLZ44ZPBF vs IRLZ44NPBF Comparación
Comparación detallada lado a lado de IRLZ44ZPBF por Infineon y IRLZ44NPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRLZ44ZPBF | IRLZ44NPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,15 | $0,68 |
| Manufacturer | Infineon (formerly International Rectifier) | — |
| Part Number | IRLZ44ZPBF | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 55 V | 55 V |
| Continuous Drain Current (ID) | 51 A | — |
| RDS(on) Max @ VGS=10V | 13.5 mOhm | — |
| RDS(on) Max @ VGS=4.5V | 22 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V | 1.0 V to 2.0 V (typ 1.5 V) |
| Total Gate Charge (Qg) | 24 nC | 32 nC |
| Rango de temperatura de funcionamiento | -55C to +175C | — |
| Maximum Junction Temperature | 175 C | — |
| Power Dissipation (PD) | 80 W | — |
| Encapsulado | TO-220AB | TO-220AB (through-hole, 3 leads) |
| Tipo de montaje | Through-Hole | Through Hole |
| Gate Drive Level | Logic-Level (4.5V to 10V) | — |
| Technology | HEXFET | HEXFET (advanced process) |
| Qualification | Automotive (per manufacturer description) | — |
| Estado RoHS | Compliant | Compliant |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC=25°C | — | 47 A |
| Pulsed Drain Current (IDM) | — | 160 A |
| Gate-to-Source Voltage (VGS) Max | — | ±16 V |
| Static Drain-to-Source On-Resistance (RDS(on)) | — | 22 mΩ max at VGS=5V, ID=25A |
| Power Dissipation (PD) at TC=25°C | — | 110 W |
| Power Dissipation (PD) at TA=25°C | — | 3.8 W |
| Temperatura de unión de funcionamiento | — | -55 °C to +175 °C |
| Thermal Resistance Junction-to-Case (RθJC) | — | 1.4 °C/W |
| Logic-Level Gate Drive | — | Yes (fully enhanced at VGS=5V) |