IRS2004STRPBF vs IRS2104STRPBF Vergleich

Detaillierter Direktvergleich von IRS2004STRPBF von Infineon und IRS2104STRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRS2004STRPBF IRS2104STRPBF
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,66 $0,45
Topologie Half-Bridge Gate Driver Half-Bridge (High-Side + Low-Side)
Driver Channels 1 high-side + 1 low-side (dependent) —
Offset Voltage (Voffset max) 200 V —
Output Source Current (typ) 0.29 A —
Output Sink Current (typ) 0.6 A —
Gate Drive Supply (VCC) 10 V to 20 V —
Logic Supply (VDD) 3.3 V to 20 V (logic compatible) —
Logic Input Compatibility 3.3 V / 5 V CMOS/LSTTL Standard CMOS / LSTTL
Propagation Delay (typ) [DATA_NEEDED: propagation delay] —
Rise/Fall Time (typ) [DATA_NEEDED: rise/fall time] —
Shutdown Input Yes (active) —
Undervoltage Lockout Yes (both channels) —
Bootstrap Operation Yes (external diode required) —
Gehäuse SOIC-8 8-Lead SOIC (SOIC-8)
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich -40 C to +125 C —
RoHS-Status Compliant (Pb-free PBF suffix) Compliant (PbF suffix)
MSL-Level MSL2 2 (1 year floor life per datasheet)
Product Type — Half-Bridge Gate Driver IC
Number of Channels — 2 (HS + LS, dependent)
High-Side Offset Voltage (VS) — -5 V to +600 V
Logic Supply Voltage (VCC) — 10 V to 20 V
Source Current (typ.) — 0.29 A
Sink Current (typ.) — 0.6 A
Propagation Delay (typ.) — 150 ns
Rise Time (typ.) — 35 ns
Fall Time (typ.) — 70 ns
Quiescent Current (typ.) — 150 uA
Undervoltage Protection — Yes (VCC and VBS UVLO)
Shutdown Pin — Yes (SD, active-low per typical usage)
Betriebs-Sperrschichttemperatur — -40C to +150C
Qualification Level — Industrial

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