IRS2104STRPBF vs IR2011STRPBF Vergleich

Detaillierter Direktvergleich von IRS2104STRPBF von Infineon und IR2011STRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRS2104STRPBF IR2011STRPBF
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,45 $0,71
Product Type Half-Bridge Gate Driver IC —
Topologie Half-Bridge (High-Side + Low-Side) —
Number of Channels 2 (HS + LS, dependent) —
High-Side Offset Voltage (VS) -5 V to +600 V —
Logic Supply Voltage (VCC) 10 V to 20 V —
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.6 A —
Propagation Delay (typ.) 150 ns 80 ns
Rise Time (typ.) 35 ns —
Fall Time (typ.) 70 ns —
Quiescent Current (typ.) 150 uA —
Undervoltage Protection Yes (VCC and VBS UVLO) —
Shutdown Pin Yes (SD, active-low per typical usage) —
Logic Input Compatibility Standard CMOS / LSTTL 3.0 V CMOS or LSTTL
Betriebs-Sperrschichttemperatur -40C to +150C —
Gehäuse 8-Lead SOIC (SOIC-8) 8-SOIC (3.90 mm body width)
Montageart Surface Mount Surface Mount
MSL-Level 2 (1 year floor life per datasheet) —
Qualification Level Industrial —
RoHS-Status Compliant (PbF suffix) —
Configuration — High-Side and Low-Side (Independent)
Number of Drivers — 2 (Half-Bridge)
Peak Source Current — 1 A (typical)
Peak Sink Current — 1 A (typical)
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Floating Supply Voltage (VBS) — 10 V to 20 V (operational to +200 V)
Turn-On Rise Time (typ.) — 35 ns
Turn-Off Fall Time (typ.) — 20 ns
Offset Voltage Rating — 200 V
Negative Transient Tolerance — dV/dt immune
Betriebstemperatur — -40 C to +125 C
Lead-Free / RoHS — Lead-Free, RoHS Compliant

Datenblätter & Ressourcen

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