IRS2104STRPBF vs IR2117STRPBF Vergleich
Detaillierter Direktvergleich von IRS2104STRPBF von Infineon und IR2117STRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRS2104STRPBF | IR2117STRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,45 | $0,58 |
| Product Type | Half-Bridge Gate Driver IC | — |
| Topologie | Half-Bridge (High-Side + Low-Side) | — |
| Number of Channels | 2 (HS + LS, dependent) | — |
| High-Side Offset Voltage (VS) | -5 V to +600 V | — |
| Logic Supply Voltage (VCC) | 10 V to 20 V | — |
| Source Current (typ.) | 0.29 A | — |
| Sink Current (typ.) | 0.6 A | — |
| Propagation Delay (typ.) | 150 ns | — |
| Rise Time (typ.) | 35 ns | — |
| Fall Time (typ.) | 70 ns | — |
| Quiescent Current (typ.) | 150 uA | — |
| Undervoltage Protection | Yes (VCC and VBS UVLO) | — |
| Shutdown Pin | Yes (SD, active-low per typical usage) | — |
| Logic Input Compatibility | Standard CMOS / LSTTL | — |
| Betriebs-Sperrschichttemperatur | -40C to +150C | — |
| Gehäuse | 8-Lead SOIC (SOIC-8) | — |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 2 (1 year floor life per datasheet) | MSL3 (per JEDEC J-STD-020) |
| Qualification Level | Industrial | — |
| RoHS-Status | Compliant (PbF suffix) | Compliant |
| Configuration | — | High-Side Single Channel |
| Funktion | — | Gate Driver, Non-Inverting |
| Input Logic Compatibility | — | CMOS / TTL |
| Anzahl der Ausgänge | — | 1 |
| Driven Device | — | N-Channel MOSFET / IGBT |
| Gate Drive Supply Voltage (VCC) | — | 10 V to 20 V |
| Floating Channel Offset Voltage | — | up to +600 V |
| Peak Source Current (IOUT+) | — | 250 mA |
| Peak Sink Current (IOUT-) | — | 500 mA |
| Propagation Delay (Ton/Toff) | — | 125 ns (max) |
| Anstiegszeit | — | 80 ns (typ) |
| Abfallzeit | — | 40 ns (typ) |
| Undervoltage Lockout (UVLO) | — | Yes |
| Negative Transient Voltage Tolerance | — | Yes, dV/dt immune |
| Betriebstemperaturbereich | — | -40 C to +125 C |
| Gehäuse / Bauform | — | 8-SOIC (0.154 inch / 3.90 mm width) |
| Lead-Free | — | Yes |