IRS2104STRPBF vs IR2117STRPBF 对比

详细并排对比 IRS2104STRPBF 出自 Infineon 和 IR2117STRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRS2104STRPBF IRS2104STRPBF - 600V Half-Bridge Gate Driver | Infineon

IRS2104STRPBF - 600V Half-Bridge Gate Driver | Infineon

IRS2104STRPBF ✓ 量产中

规格对比

参数 IRS2104STRPBF IR2117STRPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.45 $0.58
Product Type Half-Bridge Gate Driver IC —
拓扑 Half-Bridge (High-Side + Low-Side) —
Number of Channels 2 (HS + LS, dependent) —
High-Side Offset Voltage (VS) -5 V to +600 V —
Logic Supply Voltage (VCC) 10 V to 20 V —
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.6 A —
Propagation Delay (typ.) 150 ns —
Rise Time (typ.) 35 ns —
Fall Time (typ.) 70 ns —
Quiescent Current (typ.) 150 uA —
Undervoltage Protection Yes (VCC and VBS UVLO) —
Shutdown Pin Yes (SD, active-low per typical usage) —
Logic Input Compatibility Standard CMOS / LSTTL —
工作结温 -40C to +150C —
封装 8-Lead SOIC (SOIC-8) —
安装类型 Surface Mount Surface Mount
MSL 等级 2 (1 year floor life per datasheet) MSL3 (per JEDEC J-STD-020)
Qualification Level Industrial —
RoHS 状态 Compliant (PbF suffix) Compliant
Configuration — High-Side Single Channel
功能 — Gate Driver, Non-Inverting
Input Logic Compatibility — CMOS / TTL
输出数量 — 1
Driven Device — N-Channel MOSFET / IGBT
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Floating Channel Offset Voltage — up to +600 V
Peak Source Current (IOUT+) — 250 mA
Peak Sink Current (IOUT-) — 500 mA
Propagation Delay (Ton/Toff) — 125 ns (max)
上升时间 — 80 ns (typ)
下降时间 — 40 ns (typ)
Undervoltage Lockout (UVLO) — Yes
Negative Transient Voltage Tolerance — Yes, dV/dt immune
工作温度范围 — -40 C to +125 C
封装 / 外壳 — 8-SOIC (0.154 inch / 3.90 mm width)
Lead-Free — Yes

数据手册与资源

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