IRS2104STRPBF vs IR2117STRPBF Comparación
Comparación detallada lado a lado de IRS2104STRPBF por Infineon y IR2117STRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRS2104STRPBF | IR2117STRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,45 | $0,58 |
| Product Type | Half-Bridge Gate Driver IC | — |
| Topología | Half-Bridge (High-Side + Low-Side) | — |
| Number of Channels | 2 (HS + LS, dependent) | — |
| High-Side Offset Voltage (VS) | -5 V to +600 V | — |
| Logic Supply Voltage (VCC) | 10 V to 20 V | — |
| Source Current (typ.) | 0.29 A | — |
| Sink Current (typ.) | 0.6 A | — |
| Propagation Delay (typ.) | 150 ns | — |
| Rise Time (typ.) | 35 ns | — |
| Fall Time (typ.) | 70 ns | — |
| Quiescent Current (typ.) | 150 uA | — |
| Undervoltage Protection | Yes (VCC and VBS UVLO) | — |
| Shutdown Pin | Yes (SD, active-low per typical usage) | — |
| Logic Input Compatibility | Standard CMOS / LSTTL | — |
| Temperatura de unión de funcionamiento | -40C to +150C | — |
| Encapsulado | 8-Lead SOIC (SOIC-8) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | 2 (1 year floor life per datasheet) | MSL3 (per JEDEC J-STD-020) |
| Qualification Level | Industrial | — |
| Estado RoHS | Compliant (PbF suffix) | Compliant |
| Configuration | — | High-Side Single Channel |
| Función | — | Gate Driver, Non-Inverting |
| Input Logic Compatibility | — | CMOS / TTL |
| Número de salidas | — | 1 |
| Driven Device | — | N-Channel MOSFET / IGBT |
| Gate Drive Supply Voltage (VCC) | — | 10 V to 20 V |
| Floating Channel Offset Voltage | — | up to +600 V |
| Peak Source Current (IOUT+) | — | 250 mA |
| Peak Sink Current (IOUT-) | — | 500 mA |
| Propagation Delay (Ton/Toff) | — | 125 ns (max) |
| Tiempo de subida | — | 80 ns (typ) |
| Tiempo de bajada | — | 40 ns (typ) |
| Undervoltage Lockout (UVLO) | — | Yes |
| Negative Transient Voltage Tolerance | — | Yes, dV/dt immune |
| Rango de temperatura de funcionamiento | — | -40 C to +125 C |
| Encapsulado / Carcasa | — | 8-SOIC (0.154 inch / 3.90 mm width) |
| Lead-Free | — | Yes |