ISC011N04NM7VATMA1 vs IAUCN08S7L013ATMA1 Vergleich
Detaillierter Direktvergleich von ISC011N04NM7VATMA1 von Infineon und IAUCN08S7L013ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISC011N04NM7VATMA1 | IAUCN08S7L013ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,41 | $1,96 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | OptiMOS 7 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 80 V |
| Continuous Drain Current (ID) at TA=25°C | 38 A | — |
| Continuous Drain Current (ID) at TC | 256 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.1 mΩ | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 136 W | 219 W |
| Gate Threshold Voltage (Vth) | Up to 3.2 V | — |
| Technology | Trench MOSFET, silicon | — |
| Gehäuse | PG-TDSON-8 (source-down) | PG-TDSON-8-53 (TDSON-8 FL) |
| Montageart | Surface Mount | Surface Mount |
| Short-Circuit Withstand | Yes (current-limited) | — |
| Betriebstemperaturbereich | -55 °C to +175 °C (TJ) | -55 °C to +175 °C |
| RoHS Compliance | Compliant (per Infineon product page) | — |
| MSL-Level | MSL 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Channel Type | — | N-Channel |
| Maximum On-Resistance (RDS(on) max) | — | 1.26 mΩ |
| Kontinuierlicher Drain-Strom (TC=25°C) | — | [DATA_NEEDED: continuous drain current at TC=25C] |
| Continuous Drain Current (TJ) | — | 293 A |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage range] |
| Gate Drive Voltage (typical) | — | 10 V |
| Qualification | — | AEC-Q101 (automotive) |
| RoHS-Status | — | Compliant |
| Packaging | — | Tape & Reel (suffix ATMA1) |