ISC011N04NM7VATMA1 vs IAUCN08S7L013ATMA1 Comparison
Detailed side-by-side comparison of ISC011N04NM7VATMA1 by Infineon and IAUCN08S7L013ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | ISC011N04NM7VATMA1 | IAUCN08S7L013ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | OptiMOS 7 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 80 V |
| Continuous Drain Current (ID) at TA=25°C | 38 A | — |
| Continuous Drain Current (ID) at TC | 256 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.1 mΩ | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 136 W | 219 W |
| Gate Threshold Voltage (Vth) | Up to 3.2 V | — |
| Technology | Trench MOSFET, silicon | — |
| Package | PG-TDSON-8 (source-down) | PG-TDSON-8-53 (TDSON-8 FL) |
| Mounting Type | Surface Mount | Surface Mount |
| Short-Circuit Withstand | Yes (current-limited) | — |
| Operating Temperature Range | -55 °C to +175 °C (TJ) | -55 °C to +175 °C |
| RoHS Compliance | Compliant (per Infineon product page) | — |
| MSL Level | MSL 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Channel Type | — | N-Channel |
| Maximum On-Resistance (RDS(on) max) | — | 1.26 mΩ |
| Continuous Drain Current (TC=25°C) | — | [DATA_NEEDED: continuous drain current at TC=25C] |
| Continuous Drain Current (TJ) | — | 293 A |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage range] |
| Gate Drive Voltage (typical) | — | 10 V |
| Qualification | — | AEC-Q101 (automotive) |
| RoHS Status | — | Compliant |
| Packaging | — | Tape & Reel (suffix ATMA1) |