ISC011N04NM7VATMA1 vs IAUTN04S7N003ATMA1 Vergleich
Detaillierter Direktvergleich von ISC011N04NM7VATMA1 von Infineon und IAUTN04S7N003ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUTN04S7N003ATMA1 - 40V 350A OptiMOS 7 N-Channel MOSFET | Infineon
IAUTN04S7N003ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | ISC011N04NM7VATMA1 | IAUTN04S7N003ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,41 | $3,42 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 7 Power-Transistor | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at TA=25°C | 38 A | — |
| Continuous Drain Current (ID) at TC | 256 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.1 mΩ | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 136 W | — |
| Gate Threshold Voltage (Vth) | Up to 3.2 V | — |
| Technology | Trench MOSFET, silicon | OptiMOS 7 N-Channel Trench MOSFET |
| Gehäuse | PG-TDSON-8 (source-down) | PG-HSOF-8-9 (TOLL, 10x12 mm, surface mount) |
| Montageart | Surface Mount | Surface Mount |
| Short-Circuit Withstand | Yes (current-limited) | — |
| Betriebstemperaturbereich | -55 °C to +175 °C (TJ) | -55 °C to +175 °C (Tj) |
| RoHS Compliance | Compliant (per Infineon product page) | — |
| MSL-Level | MSL 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Continuous Drain Current (ID) at Tj | — | 350 A |
| Power Dissipation (PD) at Tc=25°C | — | 357 W |
| RDS(on) max at VGS=10V | — | 0.24 mOhm (typical) |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Avalanche Single-Pulse Current | — | [DATA_NEEDED: IAS] |
| Body Diode Continuous Forward Current | — | 350 A (Tj = 25 °C) |
| Body Diode Pulse Current | — | 3510 A (tp = 100 µs, Tj = 25 °C) |
| Body Diode Forward Voltage (VSD) | — | 0.95 V max (0.8 V typ) at IS = 100 A |
| Reverse Recovery Time (trr) | — | 83 ns typical / 125 ns max |
| Reverse Recovery Charge (Qrr) | — | 126 nC typical / 252 nC max |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS-Status | — | Compliant |