ISC011N04NM7VATMA1 vs IAUTN04S7N003ATMA1 Comparison
Detailed side-by-side comparison of ISC011N04NM7VATMA1 by Infineon and IAUTN04S7N003ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon
ISC011N04NM7VATMA1 β ActiveInfineon
IAUTN04S7N003ATMA1 - 40V 350A OptiMOS 7 N-Channel MOSFET | Infineon
IAUTN04S7N003ATMA1 β ActiveSpecification Comparison
| Parameter | ISC011N04NM7VATMA1 | IAUTN04S7N003ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.41 | $3.42 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 7 Power-Transistor | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at TA=25Β°C | 38 A | β |
| Continuous Drain Current (ID) at TC | 256 A | β |
| On-Resistance RDS(on) max @ VGS=10V | 1.1 mΞ© | β |
| Power Dissipation (TA) | 3 W | β |
| Power Dissipation (TC) | 136 W | β |
| Gate Threshold Voltage (Vth) | Up to 3.2 V | β |
| Technology | Trench MOSFET, silicon | OptiMOS 7 N-Channel Trench MOSFET |
| Package | PG-TDSON-8 (source-down) | PG-HSOF-8-9 (TOLL, 10x12 mm, surface mount) |
| Mounting Type | Surface Mount | Surface Mount |
| Short-Circuit Withstand | Yes (current-limited) | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (TJ) | -55 Β°C to +175 Β°C (Tj) |
| RoHS Compliance | Compliant (per Infineon product page) | β |
| MSL Level | MSL 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Continuous Drain Current (ID) at Tj | β | 350 A |
| Power Dissipation (PD) at Tc=25Β°C | β | 357 W |
| RDS(on) max at VGS=10V | β | 0.24 mOhm (typical) |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Avalanche Single-Pulse Current | β | [DATA_NEEDED: IAS] |
| Body Diode Continuous Forward Current | β | 350 A (Tj = 25 Β°C) |
| Body Diode Pulse Current | β | 3510 A (tp = 100 Β΅s, Tj = 25 Β°C) |
| Body Diode Forward Voltage (VSD) | β | 0.95 V max (0.8 V typ) at IS = 100 A |
| Reverse Recovery Time (trr) | β | 83 ns typical / 125 ns max |
| Reverse Recovery Charge (Qrr) | β | 126 nC typical / 252 nC max |
| Automotive Qualification | β | AEC-Q101 qualified |
| RoHS Status | β | Compliant |