ISC011N04NM7VATMA1 vs IAUTN04S7N003ATMA1 Comparación
Comparación detallada lado a lado de ISC011N04NM7VATMA1 por Infineon y IAUTN04S7N003ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUTN04S7N003ATMA1 - 40V 350A OptiMOS 7 N-Channel MOSFET | Infineon
IAUTN04S7N003ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | ISC011N04NM7VATMA1 | IAUTN04S7N003ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,41 | $3,42 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 7 Power-Transistor | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at TA=25°C | 38 A | — |
| Continuous Drain Current (ID) at TC | 256 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.1 mΩ | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 136 W | — |
| Gate Threshold Voltage (Vth) | Up to 3.2 V | — |
| Technology | Trench MOSFET, silicon | OptiMOS 7 N-Channel Trench MOSFET |
| Encapsulado | PG-TDSON-8 (source-down) | PG-HSOF-8-9 (TOLL, 10x12 mm, surface mount) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Short-Circuit Withstand | Yes (current-limited) | — |
| Rango de temperatura de funcionamiento | -55 °C to +175 °C (TJ) | -55 °C to +175 °C (Tj) |
| RoHS Compliance | Compliant (per Infineon product page) | — |
| Nivel MSL | MSL 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Continuous Drain Current (ID) at Tj | — | 350 A |
| Power Dissipation (PD) at Tc=25°C | — | 357 W |
| RDS(on) max at VGS=10V | — | 0.24 mOhm (typical) |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Avalanche Single-Pulse Current | — | [DATA_NEEDED: IAS] |
| Body Diode Continuous Forward Current | — | 350 A (Tj = 25 °C) |
| Body Diode Pulse Current | — | 3510 A (tp = 100 µs, Tj = 25 °C) |
| Body Diode Forward Voltage (VSD) | — | 0.95 V max (0.8 V typ) at IS = 100 A |
| Reverse Recovery Time (trr) | — | 83 ns typical / 125 ns max |
| Reverse Recovery Charge (Qrr) | — | 126 nC typical / 252 nC max |
| Automotive Qualification | — | AEC-Q101 qualified |
| Estado RoHS | — | Compliant |