ISC011N04NM7VATMA1 vs IAUTN04S7N003ATMA1 对比

详细并排对比 ISC011N04NM7VATMA1 出自 Infineon 和 IAUTN04S7N003ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
ISC011N04NM7VATMA1 ISC011N04NM7VATMA1 - 40V 1.1mΩ OptiMOS 7 N-MOSFET | Infineon

ISC011N04NM7VATMA1 - 40V 1.1mΩ OptiMOS 7 N-MOSFET | Infineon

ISC011N04NM7VATMA1 ✓ 量产中

规格对比

参数 ISC011N04NM7VATMA1 IAUTN04S7N003ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.41 $3.42
Manufacturer Infineon Technologies —
Product Family OptiMOS 7 Power-Transistor —
FET Type N-Channel —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) at TA=25°C 38 A —
Continuous Drain Current (ID) at TC 256 A —
On-Resistance RDS(on) max @ VGS=10V 1.1 mΩ —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 136 W —
Gate Threshold Voltage (Vth) Up to 3.2 V —
Technology Trench MOSFET, silicon OptiMOS 7 N-Channel Trench MOSFET
封装 PG-TDSON-8 (source-down) PG-HSOF-8-9 (TOLL, 10x12 mm, surface mount)
安装类型 Surface Mount Surface Mount
Short-Circuit Withstand Yes (current-limited) —
工作温度范围 -55 °C to +175 °C (TJ) -55 °C to +175 °C (Tj)
RoHS Compliance Compliant (per Infineon product page) —
MSL 等级 MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Continuous Drain Current (ID) at Tj — 350 A
Power Dissipation (PD) at Tc=25°C — 357 W
RDS(on) max at VGS=10V — 0.24 mOhm (typical)
Gate-Source Voltage (VGS) max — ±20 V
Avalanche Single-Pulse Current — [DATA_NEEDED: IAS]
Body Diode Continuous Forward Current — 350 A (Tj = 25 °C)
Body Diode Pulse Current — 3510 A (tp = 100 µs, Tj = 25 °C)
Body Diode Forward Voltage (VSD) — 0.95 V max (0.8 V typ) at IS = 100 A
Reverse Recovery Time (trr) — 83 ns typical / 125 ns max
Reverse Recovery Charge (Qrr) — 126 nC typical / 252 nC max
Automotive Qualification — AEC-Q101 qualified
RoHS 状态 — Compliant

数据手册与资源

浏览全部产品 创建 BOM 获取报价