ISC011N04NM7VATMA1 vs IGL65R080D2XUMA1 Vergleich
Detaillierter Direktvergleich von ISC011N04NM7VATMA1 von Infineon und IGL65R080D2XUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISC011N04NM7VATMA1 | IGL65R080D2XUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,41 | $1,97 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | CoolGaN G5 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 650 V |
| Continuous Drain Current (ID) at TA=25°C | 38 A | — |
| Continuous Drain Current (ID) at TC | 256 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.1 mΩ | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 136 W | — |
| Gate Threshold Voltage (Vth) | Up to 3.2 V | — |
| Technology | Trench MOSFET, silicon | GaN-on-Si, 200 mm wafer |
| Gehäuse | PG-TDSON-8 (source-down) | PG-TSON-8-U06 (ThinPAK 8x8) |
| Montageart | Surface Mount | Surface Mount, wettable flank |
| Short-Circuit Withstand | Yes (current-limited) | — |
| Betriebstemperaturbereich | -55 °C to +175 °C (TJ) | -55 °C to +150 °C (TJ) |
| RoHS Compliance | Compliant (per Infineon product page) | — |
| MSL-Level | MSL 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, where stated) |
| Transistortyp | — | N-Channel GaN HEMT (enhancement-mode) |
| Continuous Drain Current (ID, Tc) | — | 18 A |
| Power Dissipation (PD, Tc) | — | 81 W |
| On-Resistance RDS(on) | — | 80 mΩ (typical) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Typical Applications | — | SMPS, totem-pole PFC, LLC, USB-PD adapters |
| RoHS-Status | — | Compliant |