ISC011N04NM7VATMA1 vs IGL65R080D2XUMA1 Comparison
Detailed side-by-side comparison of ISC011N04NM7VATMA1 by Infineon and IGL65R080D2XUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | ISC011N04NM7VATMA1 | IGL65R080D2XUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | CoolGaN G5 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 650 V |
| Continuous Drain Current (ID) at TA=25°C | 38 A | — |
| Continuous Drain Current (ID) at TC | 256 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.1 mΩ | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 136 W | — |
| Gate Threshold Voltage (Vth) | Up to 3.2 V | — |
| Technology | Trench MOSFET, silicon | GaN-on-Si, 200 mm wafer |
| Package | PG-TDSON-8 (source-down) | PG-TSON-8-U06 (ThinPAK 8x8) |
| Mounting Type | Surface Mount | Surface Mount, wettable flank |
| Short-Circuit Withstand | Yes (current-limited) | — |
| Operating Temperature Range | -55 °C to +175 °C (TJ) | -55 °C to +150 °C (TJ) |
| RoHS Compliance | Compliant (per Infineon product page) | — |
| MSL Level | MSL 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, where stated) |
| Transistor Type | — | N-Channel GaN HEMT (enhancement-mode) |
| Continuous Drain Current (ID, Tc) | — | 18 A |
| Power Dissipation (PD, Tc) | — | 81 W |
| On-Resistance RDS(on) | — | 80 mΩ (typical) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Typical Applications | — | SMPS, totem-pole PFC, LLC, USB-PD adapters |
| RoHS Status | — | Compliant |