ISC015N06NM5ATMA1 vs IAUC41N06S5N102ATMA1 Vergleich
Detaillierter Direktvergleich von ISC015N06NM5ATMA1 von Infineon und IAUC41N06S5N102ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC41N06S5N102ATMA1 - 60V 47A 10.2mΩ OptiMOS 5 N-FET | Infineon
IAUC41N06S5N102ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | ISC015N06NM5ATMA1 | IAUC41N06S5N102ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,62 | $0,58 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TA=25C | 33 A | — |
| Pulsed Drain Current (IDM) at TC=25C | 259 A | — |
| On-Resistance RDS(on) typical at VGS=10V | 1.5 mOhm | — |
| Total Power Dissipation (TA) | 3 W | — |
| Total Power Dissipation (TC) | 188 W | — |
| Gehäuse | PG-TDSON-8 (PQFN 5x6) Drain-Down | PG-TDSON-8-33 (SSO8) Surface Mount |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55 C to +175 C | -55C to +175C (junction) |
| Technology | Trench MOSFET (OptiMOS 5) | — |
| RoHS-Status | Compliant | Compliant |
| MSL (Moisture Sensitivity Level) | 1 | — |
| Part Family | — | OptiMOS 5 Power-Transistor |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, Tc) | — | 47 A (Tj) |
| Power Dissipation (PD, Tc=25C) | — | 42 W |
| On-Resistance (RDS(on)) | — | 10.2 mΩ at VGS=10 V, ID=20 A |
| Gate-Source Threshold (VGS(th)) | — | 3.4 V (typical) |
| Total Gate Charge (QG) | — | 12.5 nC |
| Automotive Qualification | — | AEC-Q101 (per Infineon automotive MOSFET family) |
| Channel Polarity | — | N-Channel (single) |