ISC024N08NM7ATMA1 vs ISC011N04NM7VATMA1 Vergleich

Detaillierter Direktvergleich von ISC024N08NM7ATMA1 von Infineon und ISC011N04NM7VATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter ISC024N08NM7ATMA1 ISC011N04NM7VATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,02 $0,41
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 7 —
Channel Type N-Channel —
Drain-Source Voltage (Vdss) 80 V —
Continuous Drain Current (Id) at Ta=25C 24 A —
Continuous Drain Current (Id) at Tc 167 A —
Power Dissipation (Pd) at Ta=25C 3 W —
Power Dissipation (Pd) at Tc 150 W —
Montageart Surface Mount Surface Mount
Gehäuse / Bauform PG-TDSON-8 (SSO8) —
Betriebstemperaturbereich -55 C to +175 C -55 °C to +175 °C (TJ)
Gate Threshold Voltage (typ) [DATA_NEEDED: gate threshold voltage] —
Rds(on) at Vgs=10V (typ) [DATA_NEEDED: Rds(on) typical value] —
Total Gate Charge Qg (typ) [DATA_NEEDED: total gate charge] —
RoHS-Status Compliant —
Halogenfrei Yes —
MSL-Level 1 (per JEDEC J-STD-020) MSL 1 (per JEDEC J-STD-020)
Technology OptiMOS 7 trench MOSFET Trench MOSFET, silicon
Product Family — OptiMOS 7 Power-Transistor
FET Type — N-Channel
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TA=25°C — 38 A
Continuous Drain Current (ID) at TC — 256 A
On-Resistance RDS(on) max @ VGS=10V — 1.1 mΩ
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 136 W
Gate Threshold Voltage (Vth) — Up to 3.2 V
Gehäuse — PG-TDSON-8 (source-down)
Short-Circuit Withstand — Yes (current-limited)
RoHS Compliance — Compliant (per Infineon product page)

Datenblätter & Ressourcen

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