ISC024N08NM7ATMA1 vs ISC011N04NM7VATMA1 Comparison
Detailed side-by-side comparison of ISC024N08NM7ATMA1 by Infineon and ISC011N04NM7VATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC024N08NM7ATMA1
ISC024N08NM7ATMA1 - 80V OptiMOS 7 N-Channel MOSFET | Infineon
ISC024N08NM7ATMA1 β ActiveInfineon
ISC011N04NM7VATMA1
ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon
ISC011N04NM7VATMA1 β ActiveSpecification Comparison
| Parameter | ISC024N08NM7ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.02 | $0.41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | β |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (Vdss) | 80 V | β |
| Continuous Drain Current (Id) at Ta=25C | 24 A | β |
| Continuous Drain Current (Id) at Tc | 167 A | β |
| Power Dissipation (Pd) at Ta=25C | 3 W | β |
| Power Dissipation (Pd) at Tc | 150 W | β |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | PG-TDSON-8 (SSO8) | β |
| Operating Temperature Range | -55 C to +175 C | -55 Β°C to +175 Β°C (TJ) |
| Gate Threshold Voltage (typ) | [DATA_NEEDED: gate threshold voltage] | β |
| Rds(on) at Vgs=10V (typ) | [DATA_NEEDED: Rds(on) typical value] | β |
| Total Gate Charge Qg (typ) | [DATA_NEEDED: total gate charge] | β |
| RoHS Status | Compliant | β |
| Halogen-Free | Yes | β |
| MSL Level | 1 (per JEDEC J-STD-020) | MSL 1 (per JEDEC J-STD-020) |
| Technology | OptiMOS 7 trench MOSFET | Trench MOSFET, silicon |
| Product Family | β | OptiMOS 7 Power-Transistor |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at TA=25Β°C | β | 38 A |
| Continuous Drain Current (ID) at TC | β | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 1.1 mΞ© |
| Power Dissipation (TA) | β | 3 W |
| Power Dissipation (TC) | β | 136 W |
| Gate Threshold Voltage (Vth) | β | Up to 3.2 V |
| Package | β | PG-TDSON-8 (source-down) |
| Short-Circuit Withstand | β | Yes (current-limited) |
| RoHS Compliance | β | Compliant (per Infineon product page) |