ISC080N10NM6ATMA1 vs IPD33CN10NGATMA1 Vergleich
Detaillierter Direktvergleich von ISC080N10NM6ATMA1 von Infineon und IPD33CN10NGATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISC080N10NM6ATMA1 | IPD33CN10NGATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,05 | $0,32 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS™ 6 100V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 100 V | — |
| Continuous Drain Current (ID) at Ta | 13 A | — |
| Continuous Drain Current (ID) at Tc | 75 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 100 W | — |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | 8.05 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3.3 V at 36 µA | [DATA_NEEDED: VGS(th) typical/min/max] |
| Gehäuse | PG-TDSON-8 FL (TDSON EP) | PG-TO252-3 (DPAK), Surface Mount |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55°C to +175°C (TJ max, per datasheet) | -55C to +175C (TJ) |
| MSL-Level | 1 (per JEDEC J-STD-020, per datasheet) | 1 |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Halogenfrei | Yes | — |
| Qualification | Industrial grade (per Infineon OptiMOS 6 100V family) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc) | — | 27 A |
| Power Dissipation (PD, Tc) | — | 58 W |
| Technology | — | OptiMOS (Trench) |
| Pin-Anzahl | — | 3 (Gate, Drain, Source) |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg] |