ISC080N10NM6ATMA1 vs IPD33CN10NGATMA1 Comparison
Detailed side-by-side comparison of ISC080N10NM6ATMA1 by Infineon and IPD33CN10NGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD33CN10NGATMA1 - 100V N-Ch OptiMOS MOSFET | Infineon | PG-TO252
IPD33CN10NGATMA1 ✓ ActiveSpecification Comparison
| Parameter | ISC080N10NM6ATMA1 | IPD33CN10NGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS™ 6 100V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 100 V | — |
| Continuous Drain Current (ID) at Ta | 13 A | — |
| Continuous Drain Current (ID) at Tc | 75 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 100 W | — |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | 8.05 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3.3 V at 36 µA | [DATA_NEEDED: VGS(th) typical/min/max] |
| Package | PG-TDSON-8 FL (TDSON EP) | PG-TO252-3 (DPAK), Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55°C to +175°C (TJ max, per datasheet) | -55C to +175C (TJ) |
| MSL Level | 1 (per JEDEC J-STD-020, per datasheet) | 1 |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Halogen Free | Yes | — |
| Qualification | Industrial grade (per Infineon OptiMOS 6 100V family) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc) | — | 27 A |
| Power Dissipation (PD, Tc) | — | 58 W |
| Technology | — | OptiMOS (Trench) |
| Pin Count | — | 3 (Gate, Drain, Source) |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg] |