ISC080N10NM6ATMA1 vs ISC015N04NM5ATMA1 Vergleich
Detaillierter Direktvergleich von ISC080N10NM6ATMA1 von Infineon und ISC015N04NM5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISC080N10NM6ATMA1 | ISC015N04NM5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,05 | $0,98 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™ 6 100V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 100 V | — |
| Continuous Drain Current (ID) at Ta | 13 A | — |
| Continuous Drain Current (ID) at Tc | 75 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed IDM rating] |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 100 W | — |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | 8.05 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3.3 V at 36 µA | 3.4 V (typ) |
| Gehäuse | PG-TDSON-8 FL (TDSON EP) | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55°C to +175°C (TJ max, per datasheet) | -55 C to +175 C (junction, per OptiMOS 5) |
| MSL-Level | 1 (per JEDEC J-STD-020, per datasheet) | 1 (per Infineon SuperSO8 family) |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Halogenfrei | Yes | — |
| Qualification | Industrial grade (per Infineon OptiMOS 6 100V family) | — |
| Series | — | OptiMOS 5 40V Normal Level |
| FET Type | — | N-Channel |
| Technology | — | OptiMOS 5 (trench MOSFET) |
| Drain-Source Voltage (VDS) | — | 40 V |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| R_DS(on) max | — | 1.5 mOhm @ VGS=10 V, ID=50 A |
| Continuous Drain Current (ID) at Ta=25C | — | 33 A |
| Continuous Drain Current (ID) at Tc=25C | — | 206 A |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 115 W |
| Gehäuse / Bauform | — | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| Pin-Anzahl | — | 8 |
| Drive Level | — | Normal Level (VGS(th) ~3.4 V) |