ISC080N10NM6ATMA1 vs ISC015N04NM5ATMA1 Comparison

Detailed side-by-side comparison of ISC080N10NM6ATMA1 by Infineon and ISC015N04NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter ISC080N10NM6ATMA1 ISC015N04NM5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™ 6 100V —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) Max 100 V —
Continuous Drain Current (ID) at Ta 13 A —
Continuous Drain Current (ID) at Tc 75 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed IDM rating]
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 100 W —
On-Resistance RDS(on) Typ @ VGS=10V, ID=20A 8.05 mΩ —
Gate Threshold Voltage (VGS(th)) 3.3 V at 36 µA 3.4 V (typ)
Package PG-TDSON-8 FL (TDSON EP) —
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55°C to +175°C (TJ max, per datasheet) -55 C to +175 C (junction, per OptiMOS 5)
MSL Level 1 (per JEDEC J-STD-020, per datasheet) 1 (per Infineon SuperSO8 family)
RoHS Status Compliant Compliant
Lead-Free Yes —
Halogen Free Yes —
Qualification Industrial grade (per Infineon OptiMOS 6 100V family) —
Series — OptiMOS 5 40V Normal Level
FET Type — N-Channel
Technology — OptiMOS 5 (trench MOSFET)
Drain-Source Voltage (VDS) — 40 V
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
R_DS(on) max — 1.5 mOhm @ VGS=10 V, ID=50 A
Continuous Drain Current (ID) at Ta=25C — 33 A
Continuous Drain Current (ID) at Tc=25C — 206 A
Power Dissipation (Ta) — 3 W
Power Dissipation (Tc) — 115 W
Package / Case — PG-TDSON-8 FL (SuperSO8 5x6 mm)
Pin Count — 8
Drive Level — Normal Level (VGS(th) ~3.4 V)

Datasheets & Resources

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