ISC080N10NM6ATMA1 vs ISC015N04NM5ATMA1 Comparison
Detailed side-by-side comparison of ISC080N10NM6ATMA1 by Infineon and ISC015N04NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC080N10NM6ATMA1 - 100V OptiMOS 6 N-Channel MOSFET | Infineon
ISC080N10NM6ATMA1 β Active
Specification Comparison
| Parameter | ISC080N10NM6ATMA1 | ISC015N04NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.05 | $0.98 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOSβ’ 6 100V | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) Max | 100 V | β |
| Continuous Drain Current (ID) at Ta | 13 A | β |
| Continuous Drain Current (ID) at Tc | 75 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed IDM rating] |
| Power Dissipation (PD) at Ta | 3 W | β |
| Power Dissipation (PD) at Tc | 100 W | β |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | 8.05 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | 3.3 V at 36 Β΅A | 3.4 V (typ) |
| Package | PG-TDSON-8 FL (TDSON EP) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55Β°C to +175Β°C (TJ max, per datasheet) | -55 C to +175 C (junction, per OptiMOS 5) |
| MSL Level | 1 (per JEDEC J-STD-020, per datasheet) | 1 (per Infineon SuperSO8 family) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| Qualification | Industrial grade (per Infineon OptiMOS 6 100V family) | β |
| Series | β | OptiMOS 5 40V Normal Level |
| FET Type | β | N-Channel |
| Technology | β | OptiMOS 5 (trench MOSFET) |
| Drain-Source Voltage (VDS) | β | 40 V |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max rating] |
| R_DS(on) max | β | 1.5 mOhm @ VGS=10 V, ID=50 A |
| Continuous Drain Current (ID) at Ta=25C | β | 33 A |
| Continuous Drain Current (ID) at Tc=25C | β | 206 A |
| Power Dissipation (Ta) | β | 3 W |
| Power Dissipation (Tc) | β | 115 W |
| Package / Case | β | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| Pin Count | β | 8 |
| Drive Level | β | Normal Level (VGS(th) ~3.4 V) |