ISZ028N03LF2SATMA1 vs ISC016N08NM8SCATMA1 Vergleich
Detaillierter Direktvergleich von ISZ028N03LF2SATMA1 von Infineon und ISC016N08NM8SCATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 ✓ AktivInfineon
ISC016N08NM8SCATMA1 - 80V OptiMOS 8 N-Channel MOSFET | Infineon
ISC016N08NM8SCATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | ISZ028N03LF2SATMA1 | ISC016N08NM8SCATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,49 | $1,72 |
| FET Type | N-Channel | N-Channel |
| Technology | StrongIRFET 2 (Trench MOSFET) | OptiMOS 8 (shield-gate trench) |
| Drain-Source Voltage (VDS) | 30 V | 80 V |
| Continuous Drain Current (ID) at Tc | 128 A | — |
| Continuous Drain Current (ID) at Ta | 22 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate Threshold Voltage (VGS(th)) | 2.35 V | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-Resistance (RDS(on)) max | 2.8 mΩ | — |
| Power Dissipation (Tc) | 83 W | — |
| Power Dissipation (Ta) | 3 W | — |
| Gehäuse | PG-TSDSON-8 FL (FL = flat lead) | PG-WSON-8-2 (SuperSO8 DSC, 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +175C (junction, typical) | -55C to +175C |
| Gate Drive Voltage (recommended) | 10 V (logic level at 4.5 V) | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 | 1 (per JEDEC J-STD-020) |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | [DATA_NEEDED: typical Qg @ VGS=10V] |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 8 |
| Continuous Drain Current at TA=25°C (ID) | — | 29 A |
| Continuous Drain Current at TC=25°C (ID) | — | 269 A |
| Power Dissipation at TC=25°C (PD) | — | 263 W |
| On-Resistance RDS(on) at VGS=10V | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Drain Tab Connection | — | Top + bottom exposed (dual-side cooling) |