ISZ028N03LF2SATMA1 vs ISC016N08NM8SCATMA1 比較
詳細な並列比較: ISZ028N03LF2SATMA1 メーカー: Infineon および ISC016N08NM8SCATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 ✓ 生産中
仕様比較
| パラメータ | ISZ028N03LF2SATMA1 | ISC016N08NM8SCATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.49 | $1.72 |
| FET Type | N-Channel | N-Channel |
| Technology | StrongIRFET 2 (Trench MOSFET) | OptiMOS 8 (shield-gate trench) |
| Drain-Source Voltage (VDS) | 30 V | 80 V |
| Continuous Drain Current (ID) at Tc | 128 A | — |
| Continuous Drain Current (ID) at Ta | 22 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate Threshold Voltage (VGS(th)) | 2.35 V | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-Resistance (RDS(on)) max | 2.8 mΩ | — |
| Power Dissipation (Tc) | 83 W | — |
| Power Dissipation (Ta) | 3 W | — |
| パッケージ | PG-TSDSON-8 FL (FL = flat lead) | PG-WSON-8-2 (SuperSO8 DSC, 5x6 mm) |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度範囲 | -55C to +175C (junction, typical) | -55C to +175C |
| Gate Drive Voltage (recommended) | 10 V (logic level at 4.5 V) | — |
| RoHS ステータス | Compliant | Compliant |
| MSLレベル | 1 | 1 (per JEDEC J-STD-020) |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | [DATA_NEEDED: typical Qg @ VGS=10V] |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 8 |
| Continuous Drain Current at TA=25°C (ID) | — | 29 A |
| Continuous Drain Current at TC=25°C (ID) | — | 269 A |
| Power Dissipation at TC=25°C (PD) | — | 263 W |
| On-Resistance RDS(on) at VGS=10V | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Drain Tab Connection | — | Top + bottom exposed (dual-side cooling) |