ISZ028N03LF2SATMA1 vs ISC016N08NM8SCATMA1 Сравнение
Подробное сравнение бок о бок ISZ028N03LF2SATMA1 от Infineon и ISC016N08NM8SCATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 ✓ АктивенInfineon
ISC016N08NM8SCATMA1 - 80V OptiMOS 8 N-Channel MOSFET | Infineon
ISC016N08NM8SCATMA1 ✓ АктивенСравнение характеристик
| Параметр | ISZ028N03LF2SATMA1 | ISC016N08NM8SCATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,49 | $1,72 |
| FET Type | N-Channel | N-Channel |
| Technology | StrongIRFET 2 (Trench MOSFET) | OptiMOS 8 (shield-gate trench) |
| Drain-Source Voltage (VDS) | 30 V | 80 V |
| Continuous Drain Current (ID) at Tc | 128 A | — |
| Continuous Drain Current (ID) at Ta | 22 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate Threshold Voltage (VGS(th)) | 2.35 V | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-Resistance (RDS(on)) max | 2.8 mΩ | — |
| Power Dissipation (Tc) | 83 W | — |
| Power Dissipation (Ta) | 3 W | — |
| Корпус | PG-TSDSON-8 FL (FL = flat lead) | PG-WSON-8-2 (SuperSO8 DSC, 5x6 mm) |
| Тип монтажа | Surface Mount | Surface Mount |
| Диапазон рабочих температур | -55C to +175C (junction, typical) | -55C to +175C |
| Gate Drive Voltage (recommended) | 10 V (logic level at 4.5 V) | — |
| Статус RoHS | Compliant | Compliant |
| Уровень MSL | 1 | 1 (per JEDEC J-STD-020) |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | [DATA_NEEDED: typical Qg @ VGS=10V] |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 8 |
| Continuous Drain Current at TA=25°C (ID) | — | 29 A |
| Continuous Drain Current at TC=25°C (ID) | — | 269 A |
| Power Dissipation at TC=25°C (PD) | — | 263 W |
| On-Resistance RDS(on) at VGS=10V | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Drain Tab Connection | — | Top + bottom exposed (dual-side cooling) |