ISZ028N03LF2SATMA1 vs ISC016N08NM8SCATMA1 Comparaison
Comparaison détaillée côte à côte de ISZ028N03LF2SATMA1 par Infineon et ISC016N08NM8SCATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 ✓ ActifInfineon
ISC016N08NM8SCATMA1 - 80V OptiMOS 8 N-Channel MOSFET | Infineon
ISC016N08NM8SCATMA1 ✓ ActifComparaison des spécifications
| Paramètre | ISZ028N03LF2SATMA1 | ISC016N08NM8SCATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,49 | $1,72 |
| FET Type | N-Channel | N-Channel |
| Technology | StrongIRFET 2 (Trench MOSFET) | OptiMOS 8 (shield-gate trench) |
| Drain-Source Voltage (VDS) | 30 V | 80 V |
| Continuous Drain Current (ID) at Tc | 128 A | — |
| Continuous Drain Current (ID) at Ta | 22 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate Threshold Voltage (VGS(th)) | 2.35 V | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-Resistance (RDS(on)) max | 2.8 mΩ | — |
| Power Dissipation (Tc) | 83 W | — |
| Power Dissipation (Ta) | 3 W | — |
| Boîtier | PG-TSDSON-8 FL (FL = flat lead) | PG-WSON-8-2 (SuperSO8 DSC, 5x6 mm) |
| Type de montage | Surface Mount | Surface Mount |
| Plage de température de fonctionnement | -55C to +175C (junction, typical) | -55C to +175C |
| Gate Drive Voltage (recommended) | 10 V (logic level at 4.5 V) | — |
| Statut RoHS | Compliant | Compliant |
| Niveau MSL | 1 | 1 (per JEDEC J-STD-020) |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | [DATA_NEEDED: typical Qg @ VGS=10V] |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 8 |
| Continuous Drain Current at TA=25°C (ID) | — | 29 A |
| Continuous Drain Current at TC=25°C (ID) | — | 269 A |
| Power Dissipation at TC=25°C (PD) | — | 263 W |
| On-Resistance RDS(on) at VGS=10V | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Drain Tab Connection | — | Top + bottom exposed (dual-side cooling) |