K3KL3L30CM-BGCU - 64Gb LPDDR5X DRAM 8533Mbps | Samsung
Teilenummer: K3KL3L30CM-BGCU ✓ Aktiv| Menge | Stückpreis | Gesamt |
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| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1.000 | $0 | $0,00 |
K3KL3L30CM-BGCU Übersicht
LPDDR5X SDRAM is the extended-performance variant of LPDDR5 low-power DRAM, a class of volatile memory that refreshes stored data dynamically and is optimized for high bandwidth per watt. In the memory hierarchy it sits above LPDDR5 and below HBM (High Bandwidth Memory): LPDDR -> low-power DRAM -> DRAM -> semiconductor memory IC. LPDDR5X devices such as this one are the dominant main-memory choice for smartphones, tablets, automotive ADAS domain controllers, and edge-AI modules where power budget and bandwidth both matter.
According to Samsung Semiconductor product material, the LPDDR5X family delivers speeds up to 1.25x faster and 25% better power efficiency than the previous LPDDR5 generation, with the premium tier reaching 8.5 Gbps and up to 64 GB capacity per module for IT-industry and automotive devices. The K3KL3L30CM-BGCU exemplifies this: at 8533 Mbps per pin it enables memory bandwidths suitable for large language-model inference at the edge and high-resolution sensor fusion.
Technically, the device uses Samsung advanced DRAM process technology with stacked die in a compact FBGA-496 ball grid array. The x64 memory organization provides wide parallel access, and LPDDR5X dynamic voltage scaling plus deep power-down states reduce average power in bursty AI workloads. Compared with LPDDR5 at 6400 Mbps, the 8533 Mbps rate raises peak bandwidth by roughly one third at similar or lower energy per bit.
Typical applications include flagship smartphone application-processor main memory, automotive infotainment and ADAS compute platforms, AI edge modules and robotics, and high-performance tablet or notebook memory subsystems.
Design consideration: LPDDR5X requires strict length-matched fly-by routing, a well-defined VDDQ power rail with fast transient response, and SoC memory-controller training support for the 8533 Mbps gear; verify controller compatibility before layout.
This page synthesizes distributor stock listings, drop-in alternative analysis, and practical integration guidance not found in the manufacturer datasheet. Pricing is quote-based (RFQ) as of 2026-09-04.
Drop-in-Alternativen für K3KL3L30CM-BGCU – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit K3KL3L30CM-BGCU (gleiche Bauform und Footprint) – abweichend in Memory Type, Interface, Density, Package, Application Segment.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
K3KL3L30CM-BGCT
✅ Drop-In✓ Auf Lager
Preis auf Anfrage
Datenblatt ansehen →K3KL3L30DM-BGCU
✅ Drop-In✓ Auf Lager
$45.9375 / Stück
Datenblatt ansehen →K3LK4L40DM-BGCT
✅ Drop-In✓ Auf Lager
$40.5 / Stück
Datenblatt ansehen →K3KL6L60GM-MGCT
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
K3KL3L30CM-BGCU Grenzwerte & elektrische Eigenschaften
| Speichertyp | LPDDR5X SDRAM (Volatile DRAM) |
| Speichergröße | 64 Gb (8 GB) |
| Datenrate | 8533 Mbps |
| Memory Organization | x64 |
| Technology | LPDDR5X (JEDEC LPDDR5X-class low-power DRAM) |
| Gehäuse | FBGA-496 (BGCU) |
| Montageart | Surface Mount |
| Die Configuration | Stacked multi-die DRAM |
| Schnittstelle | LPDDR5X (standard LPDDR ball interface) |
| Application Segment | AI devices and automotive |
| Power Efficiency | Approx. 25% better than previous LPDDR5 generation (per Samsung) |
| Speed Improvement | Up to 1.25x faster than previous generation (per Samsung) |
| Place of Origin (per distributor listing) | Johor, Malaysia |
K3KL3L30CM-BGCU fbga-496 (bgcu) Pinbelegungsleitfaden
Pinbelegung für K3KL3L30CM-BGCU (fbga-496 (bgcu)-Gehäuse). Dieser digitale IC umfasst GPIO, Kommunikationsschnittstellen (UART, SPI, I2C) und Versorgungspins. Alternative Pin-Funktionen und Konfigurationsoptionen entnehmen Sie dem Herstellerdatenblatt. Unverzichtbar für Embedded-System-Design und PCB-Layout.
Keine detaillierten Pinbelegungsdaten verfügbar für K3KL3L30CM-BGCU.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
K3KL3L30CM-BGCU ist geeignet für 6 Anwendungs: Flagship Smartphone Main Memory, Automotive ADAS and In-Vehicle Computing, AI Edge Modules and Robotics, Tablet and Notebook Memory Subsystems, High-Resolution Camera and Vision Systems, Networking and 5G Infrastructure Cards.
Flagship Smartphone Main Memory
The K3KL3L30CM-BGCU serves as main system memory alongside flagship application processors, where its 64 Gb (8 GB) capacity and 8533 Mbps data rate deliver the bandwidth demanded by large apps, high-resolution cameras, and on-device AI assistants. Samsung's LPDDR5X material notes up to 1.25x speed and 25% better power efficiency versus LPDDR5, directly extending battery life in burst-heavy mobile workloads. The FBGA-496 stacked-die package minimizes board area beside the SoC. Performance consideration: memory-controller training at the top gear is required; thermal throttling of the DRAM under sustained camera-AI loads should be modeled in the mechanical design.
Empfohlen
Automotive ADAS and In-Vehicle Computing
Samsung explicitly targets the LPDDR5X family, including the K3KL3L30CM-BGCU, at in-vehicle devices. ADAS domain controllers running multi-camera perception, sensor fusion, and driver-monitoring need multi-GB frame buffers with deterministic bandwidth; the 8533 Mbps x64 interface supplies this within a tight power envelope suitable for fanless automotive ECUs. The 64 Gb density accommodates neural-network weights and HD-map data locally. Design consideration: verify the automotive-qualified ordering variant, temperature grade, and AEC-style qualification documentation with Samsung before design-in, and plan LPDDR5X signal integrity for the harsher automotive EMI environment.
Empfohlen
AI Edge Modules and Robotics
Edge-AI accelerator modules and autonomous robots load large neural models into local memory; the K3KL3L30CM-BGCU's 8 GB capacity and 8533 Mbps bus reduce model-swapping latency and raise effective inference throughput. Samsung's 25% power-efficiency gain over LPDDR5 matters in battery-powered robots and drones where every watt of DRAM power shortens runtime. Placed on a compact compute module with an LPDDR5X-capable SoC, it minimizes cabling and improves mechanical robustness. Performance consideration: sustained AI inference heats stacked DRAM die; validate junction temperature under worst-case bandwidth utilization and derate the top speed gear if thermal margins are thin.
Empfohlen
Tablet and Notebook Memory Subsystems
Premium tablets and thin-and-light notebooks use soldered LPDDR5X to save height and power versus DDR5 SO-DIMMs. The K3KL3L30CM-BGCU provides 8 GB per package, so two packages yield 16 GB of dual-channel memory within the footprint of a DIMM slot eliminated from the board. Its 8533 Mbps rate sustains integrated-GPU bandwidth for content creation and gaming. Samsung's efficiency improvement translates into quieter thermal designs and longer untethered runtime. Design consideration: soldered memory is unupgradable, so choose package density to match the product's top configuration, and validate memory-down layout against the SoC vendor's routing guideline.
Empfohlen
High-Resolution Camera and Vision Systems
Machine-vision and surveillance systems streaming multiple 4K/8K sensors require large line buffers and fast frame staging; the K3KL3L30CM-BGCU's 8533 Mbps x64 interface absorbs sensor bursts without dropping frames, while 8 GB stores multi-second rolling buffers for event capture and AI analytics. Samsung's LPDDR5X power efficiency reduces the thermal load in sealed outdoor camera housings that rely on passive cooling. The FBGA-496 stacked package fits the compact sensor-board envelope. Performance consideration: ensure the image signal processor's memory interface supports LPDDR5X gear rates and that DMA scheduling prevents bus contention between sensor pipelines.
Empfohlen
Networking and 5G Infrastructure Cards
5G small-cell and edge data-center line cards use LPDDR5X as forwarding-plane and control-plane memory, where per-watt bandwidth drives heat-sink and power-supply sizing. The K3KL3L30CM-BGCU's 8 GB and 8533 Mbps bus support deep packet buffers and lookup tables under high connection counts, and Samsung's efficiency gain over LPDDR5 lowers the card's total power budget. Stacked-die FBGA packaging enables high memory density per square centimeter on dense line cards. Design consideration: confirm 24/7 sustained-operation temperature derating and request long-term supply commitments from Samsung, since infrastructure programs demand multi-year continuity.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für K3KL3L30CM-BGCU – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | K3KL3L30CM-BGCT | K3KL3L30DM-BGCU | K3KL6L60GM-MGCT |
|---|---|---|---|---|
| Package | FBGA-496 (BGCU) | FBGA-496 - same | FBGA-496 - same | FBGA (MGCT variant) - verify ballmap |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Size | 64 Gb (8 GB) | 64 Gb (8 GB) | 64 Gb (8 GB) | 16 Gb (2 GB) |
| Memory Technology | LPDDR5X | LPDDR5X | LPDDR5X | LPDDR5X |
| Memory Organization | x64 | x64 | x64 | x32 |
| Target Segment | AI and in-vehicle / mobile | Mobile computing | AI / mobile | Mobile / cost-optimized |
| Lifecycle Status | Active | Active | Active | Active |
| Price (qty 1) | RFQ | RFQ | RFQ | RFQ |
Wichtigste Unterscheidungsmerkmale
- Maximum 8 GB capacity in a single package (vs. K3KL6L60GM-MGCT)
- Identical silicon with flexible packing (vs. K3KL3L30CM-BGCT)
- LPDDR5X efficiency headroom (vs. LPDDR5-class devices)
Designhinweise
LPDDR5X at 8533 Mbps demands disciplined fly-by routing: keep all DRAM-to-SoC trace lengths matched within the SoC vendor's specified skew window, use controlled impedance (single-ended ~40 ohm typical per LPDDR design practice), and route DQ/DBI bytes over solid reference planes with no splits. Place the FBGA-496 package within a few centimeters of the controller. Run IBIS-ODEM or equivalent channel simulation on the top speed bin before committing the stackup; at 8533 Mbps, via stubs and connector transitions dominate ISI.
LPDDR5X uses multiple rails (VDD, VDD2, VDDQ per the official datasheet) supplied from a PMIC with dynamic voltage-frequency scaling tied to the active gear. Confirm exact rail voltages from the Samsung datasheet rather than assuming LPDDR5 values, since LPDDR5X lowers VDDQ versus LPDDR5 to achieve its 25% efficiency gain. Size the PMIC for simultaneous read/write burst currents on the x64 bus and add bulk plus high-frequency decoupling at each ball group. Sequence rails per the datasheet power-up order to avoid latch-up.
Do not assume cross-vendor LPDDR5X interchangeability: ballmaps, die stacks, and timing sets differ by manufacturer, so treat Micron or SK hynix parts as second sources requiring full re-verification, not drop-ins. Also note the CM vs DM Samsung die-revision suffix can change supported speed bins - always qualify the exact ordering code used in production. Finally, soldered LPDDR5X is not field-upgradable: lock the density decision to the top product SKU early, and confirm controller gear-training support with your SoC vendor before layout freeze.
Compliance-Informationen
Compliance data not published in the provided sources. Samsung typically documents RoHS/REACH status on official product pages; request the compliance declaration from Samsung or the distributor for the exact ordering code.
