K3KL7L70EM-MGCU vs K3KL2L20DM-JGCT Vergleich
Detaillierter Direktvergleich von K3KL7L70EM-MGCU von Samsung Electronics und K3KL2L20DM-JGCT von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K3KL7L70EM-MGCU | K3KL2L20DM-JGCT |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $12,00 | $20,80 |
| Speichertyp | LPDDR5X SDRAM | LPDDR5X SDRAM |
| Density | 12 Gbit | 48 Gb |
| Speicherorganisation | x32 | x64 |
| Gehäuse | 315-ball FBGA | 441-ball FBGA |
| Montageart | Surface Mount (BGA) | Surface Mount |
| Product Status | Mass Production | Mass Production |
| Schnittstelle | LPDDR5X | LPDDR5X (JEDEC low-power DRAM interface) |
| Manufacturer | Samsung Semiconductor | — |
| Supply Voltage (Core) | [DATA_NEEDED: core supply voltage] | — |
| Datenrate | [DATA_NEEDED: data rate in Mbps/pin] | 7500 Mbps |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | -25C to +85C |
| Refresh | Self-refresh supported (per LPDDR5X family) | — |
| Power Modes | Deep sleep, self refresh, power down (per LPDDR5X family) | — |
| Fab Location | Johor, Malaysia (listed by distributor) | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | unknown |
| Supply Voltage (VDD1) | — | 1.8 V |
| Supply Voltage (VDD2) | — | 1.05 V |
| Supply Voltage (VDDQ) | — | 0.5 V |
| Core Voltage Rail | — | 0.9 V |
| Generation | — | LPDDR5X (1.25x speed, 25% better power efficiency vs LPDDR5) |
| Application Segment | — | AI devices, automotive, mobile |