K3KL8L80QM-MUCT vs K3LKCKC0BM-MGCP Vergleich
Detaillierter Direktvergleich von K3KL8L80QM-MUCT von Samsung Electronics und K3LKCKC0BM-MGCP von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K3KL8L80QM-MUCT | K3LKCKC0BM-MGCP |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | DRAM |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $13,40 | $65,63 |
| Speichertyp | LPDDR5X SDRAM | LPDDR5 SDRAM |
| Density | 32 Gb (4 GB) | 64 Gbit (8 GB) |
| Speicherorganisation | [DATA_NEEDED: organization (xN bit width)] | 2G x32 |
| Datenrate | [DATA_NEEDED: data rate per pin (Gbps)] | 6400 Mbps |
| Supply Voltage Class | [DATA_NEEDED: VDD/VDDQ voltage] | — |
| Speed Grade | QM (per Samsung part numbering) | — |
| Gehäuse | FBGA (original package, 315-ball class) | FBGA-315 (PBGA) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | -25C to +85C |
| Schnittstelle | LPDDR5X channel interface | CMOS, LPDDR5 |
| Series | LPDDR5X | — |
| Marke | Samsung Semiconductor | — |
| Packaging Suffix | MUCT | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | Compliant |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Application Segment | Mobile / AI edge computing | — |
| Supply Voltage (VDD1) | — | 1.05 V |
| Supply Voltage (VDD2/other rails) | — | 1.8 V, 900 mV, 500 mV |
| Technology | — | CMOS DRAM |
| Product Family | — | Samsung LPDDR5 |
| Bandwidth (per Samsung LPDDR5 family) | — | 51.2 GB/s (family-level, 6400 Mbps pin speed) |
| Power Saving (family feature) | — | Up to 20% power saving vs previous generation (Samsung LPDDR5 family) |
| Unit Price | — | USD 57.7195 (LCSC, as of 2026-09-04) |