K3KL8L80QM-MUCT vs K3LKCKC0BM-MGCP 对比
详细并排对比 K3KL8L80QM-MUCT 出自 Samsung Electronics 和 K3LKCKC0BM-MGCP 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K3KL8L80QM-MUCT | K3LKCKC0BM-MGCP |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $13.40 | $65.63 |
| 存储器类型 | LPDDR5X SDRAM | LPDDR5 SDRAM |
| Density | 32 Gb (4 GB) | 64 Gbit (8 GB) |
| 存储组织 | [DATA_NEEDED: organization (xN bit width)] | 2G x32 |
| 数据速率 | [DATA_NEEDED: data rate per pin (Gbps)] | 6400 Mbps |
| Supply Voltage Class | [DATA_NEEDED: VDD/VDDQ voltage] | — |
| Speed Grade | QM (per Samsung part numbering) | — |
| 封装 | FBGA (original package, 315-ball class) | FBGA-315 (PBGA) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | [DATA_NEEDED: operating temperature range] | -25C to +85C |
| 接口 | LPDDR5X channel interface | CMOS, LPDDR5 |
| Series | LPDDR5X | — |
| 品牌 | Samsung Semiconductor | — |
| Packaging Suffix | MUCT | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | Compliant |
| MSL 等级 | [DATA_NEEDED: moisture sensitivity level] | — |
| Application Segment | Mobile / AI edge computing | — |
| Supply Voltage (VDD1) | — | 1.05 V |
| Supply Voltage (VDD2/other rails) | — | 1.8 V, 900 mV, 500 mV |
| Technology | — | CMOS DRAM |
| Product Family | — | Samsung LPDDR5 |
| Bandwidth (per Samsung LPDDR5 family) | — | 51.2 GB/s (family-level, 6400 Mbps pin speed) |
| Power Saving (family feature) | — | Up to 20% power saving vs previous generation (Samsung LPDDR5 family) |
| Unit Price | — | USD 57.7195 (LCSC, as of 2026-09-04) |