K3KL8L80QM-MUCT vs K3LKCKC0BM-MGCP Comparaison
Comparaison détaillée côte à côte de K3KL8L80QM-MUCT par Samsung Electronics et K3LKCKC0BM-MGCP par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | K3KL8L80QM-MUCT | K3LKCKC0BM-MGCP |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | Memory ICs | DRAM |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $13,40 | $65,63 |
| Type de mémoire | LPDDR5X SDRAM | LPDDR5 SDRAM |
| Density | 32 Gb (4 GB) | 64 Gbit (8 GB) |
| Organisation de la mémoire | [DATA_NEEDED: organization (xN bit width)] | 2G x32 |
| Débit de données | [DATA_NEEDED: data rate per pin (Gbps)] | 6400 Mbps |
| Supply Voltage Class | [DATA_NEEDED: VDD/VDDQ voltage] | — |
| Speed Grade | QM (per Samsung part numbering) | — |
| Boîtier | FBGA (original package, 315-ball class) | FBGA-315 (PBGA) |
| Type de montage | Surface Mount | Surface Mount |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | -25C to +85C |
| Interface | LPDDR5X channel interface | CMOS, LPDDR5 |
| Series | LPDDR5X | — |
| Marque | Samsung Semiconductor | — |
| Packaging Suffix | MUCT | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Niveau MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Application Segment | Mobile / AI edge computing | — |
| Supply Voltage (VDD1) | — | 1.05 V |
| Supply Voltage (VDD2/other rails) | — | 1.8 V, 900 mV, 500 mV |
| Technology | — | CMOS DRAM |
| Product Family | — | Samsung LPDDR5 |
| Bandwidth (per Samsung LPDDR5 family) | — | 51.2 GB/s (family-level, 6400 Mbps pin speed) |
| Power Saving (family feature) | — | Up to 20% power saving vs previous generation (Samsung LPDDR5 family) |
| Unit Price | — | USD 57.7195 (LCSC, as of 2026-09-04) |