K3LK4L40DM-BGCT vs K3LK8K80CM-MFCP Vergleich
Detaillierter Direktvergleich von K3LK4L40DM-BGCT von Samsung Electronics und K3LK8K80CM-MFCP von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Samsung Electronics
K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics
K3LK4L40DM-BGCT ✓ Aktiv
Spezifikationsvergleich
| Parameter | K3LK4L40DM-BGCT | K3LK8K80CM-MFCP |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | DRAM | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $40,50 | $0,00 |
| Speichertyp | DRAM (SDRAM component) | LPDDR5 SDRAM |
| Manufacturer | Samsung Electronics | — |
| Density | [DATA_NEEDED: Density] | 48 Gbit (6 GB) |
| Organization (x-width) | [DATA_NEEDED: Organization] | — |
| Datenrate | [DATA_NEEDED: Data Rate] | — |
| Supply Voltage Class | [DATA_NEEDED: Supply Voltage] | — |
| CAS-Latenz | [DATA_NEEDED: CAS Latency] | — |
| Package Type | BGA (per -BGC ordering-code suffix) | — |
| Package Ball Count | [DATA_NEEDED: Ball Count] | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | [DATA_NEEDED: Operating Temperature Range] | -40 C to +105 C (automotive-grade) |
| Refresh Rate | [DATA_NEEDED: Refresh Interval] | — |
| RoHS-Status | [DATA_NEEDED: RoHS Status] | unknown |
| Lead Free | [DATA_NEEDED: Lead-Free Status] | — |
| MSL-Level | [DATA_NEEDED: Moisture Sensitivity Level] | — |
| Packaging | Tape & Reel (per -T-style suffix convention) [DATA_NEEDED: confirmed packaging] | — |
| Speicherorganisation | — | [DATA_NEEDED: organization (x width)] |
| Pin Speed | — | 6400 Mbps |
| Data Rate (package) | — | 51.2 GB/s (family max) |
| Schnittstelle | — | LPDDR5 (JESD209-5 class low-power DRAM interface) |
| Gehäuse | — | 315-ball FBGA (MFCP) |
| Ball Count | — | 315 |
| Versorgungsspannung | — | [DATA_NEEDED: VDD/VDDQ voltage] |
| Power Saving vs LPDDR4X | — | Approximately 20% |
| Generation | — | LPDDR5 (5th generation low-power DRAM) |
| Application Grade | — | Automotive-grade storage chip |
| Place of Origin | — | Johor, Malaysia |