K3LK4L40DM-BGCT vs K3LK8K80CM-MFCP Comparación
Comparación detallada lado a lado de K3LK4L40DM-BGCT por Samsung Electronics y K3LK8K80CM-MFCP por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Samsung Electronics
K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics
K3LK4L40DM-BGCT ✓ ActivoSamsung Electronics
K3LK8K80CM-MFCP - 48Gbit LPDDR5 6400Mbps DRAM | Samsung
K3LK8K80CM-MFCP ✓ ActivoComparación de especificaciones
| Parámetro | K3LK4L40DM-BGCT | K3LK8K80CM-MFCP |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | DRAM | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $40,50 | $0,00 |
| Tipo de memoria | DRAM (SDRAM component) | LPDDR5 SDRAM |
| Manufacturer | Samsung Electronics | — |
| Density | [DATA_NEEDED: Density] | 48 Gbit (6 GB) |
| Organization (x-width) | [DATA_NEEDED: Organization] | — |
| Velocidad de datos | [DATA_NEEDED: Data Rate] | — |
| Supply Voltage Class | [DATA_NEEDED: Supply Voltage] | — |
| Latencia CAS | [DATA_NEEDED: CAS Latency] | — |
| Package Type | BGA (per -BGC ordering-code suffix) | — |
| Package Ball Count | [DATA_NEEDED: Ball Count] | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | [DATA_NEEDED: Operating Temperature Range] | -40 C to +105 C (automotive-grade) |
| Refresh Rate | [DATA_NEEDED: Refresh Interval] | — |
| Estado RoHS | [DATA_NEEDED: RoHS Status] | unknown |
| Lead Free | [DATA_NEEDED: Lead-Free Status] | — |
| Nivel MSL | [DATA_NEEDED: Moisture Sensitivity Level] | — |
| Packaging | Tape & Reel (per -T-style suffix convention) [DATA_NEEDED: confirmed packaging] | — |
| Organización de memoria | — | [DATA_NEEDED: organization (x width)] |
| Pin Speed | — | 6400 Mbps |
| Data Rate (package) | — | 51.2 GB/s (family max) |
| Interfaz | — | LPDDR5 (JESD209-5 class low-power DRAM interface) |
| Encapsulado | — | 315-ball FBGA (MFCP) |
| Ball Count | — | 315 |
| Tensión de alimentación | — | [DATA_NEEDED: VDD/VDDQ voltage] |
| Power Saving vs LPDDR4X | — | Approximately 20% |
| Generation | — | LPDDR5 (5th generation low-power DRAM) |
| Application Grade | — | Automotive-grade storage chip |
| Place of Origin | — | Johor, Malaysia |