K3LK4L40DM-BGCT vs K3LK8K80CM-MFCP 对比
详细并排对比 K3LK4L40DM-BGCT 出自 Samsung Electronics 和 K3LK8K80CM-MFCP 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics
K3LK4L40DM-BGCT ✓ 量产中
规格对比
| 参数 | K3LK4L40DM-BGCT | K3LK8K80CM-MFCP |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | DRAM | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $40.50 | $0.00 |
| 存储器类型 | DRAM (SDRAM component) | LPDDR5 SDRAM |
| Manufacturer | Samsung Electronics | — |
| Density | [DATA_NEEDED: Density] | 48 Gbit (6 GB) |
| Organization (x-width) | [DATA_NEEDED: Organization] | — |
| 数据速率 | [DATA_NEEDED: Data Rate] | — |
| Supply Voltage Class | [DATA_NEEDED: Supply Voltage] | — |
| CAS 延迟 | [DATA_NEEDED: CAS Latency] | — |
| Package Type | BGA (per -BGC ordering-code suffix) | — |
| Package Ball Count | [DATA_NEEDED: Ball Count] | — |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | [DATA_NEEDED: Operating Temperature Range] | -40 C to +105 C (automotive-grade) |
| Refresh Rate | [DATA_NEEDED: Refresh Interval] | — |
| RoHS 状态 | [DATA_NEEDED: RoHS Status] | unknown |
| Lead Free | [DATA_NEEDED: Lead-Free Status] | — |
| MSL 等级 | [DATA_NEEDED: Moisture Sensitivity Level] | — |
| Packaging | Tape & Reel (per -T-style suffix convention) [DATA_NEEDED: confirmed packaging] | — |
| 存储组织 | — | [DATA_NEEDED: organization (x width)] |
| Pin Speed | — | 6400 Mbps |
| Data Rate (package) | — | 51.2 GB/s (family max) |
| 接口 | — | LPDDR5 (JESD209-5 class low-power DRAM interface) |
| 封装 | — | 315-ball FBGA (MFCP) |
| Ball Count | — | 315 |
| 电源电压 | — | [DATA_NEEDED: VDD/VDDQ voltage] |
| Power Saving vs LPDDR4X | — | Approximately 20% |
| Generation | — | LPDDR5 (5th generation low-power DRAM) |
| Application Grade | — | Automotive-grade storage chip |
| Place of Origin | — | Johor, Malaysia |