K3LK4L40DM-BGCT vs K3LK8K80CM-MFCP Comparaison
Comparaison détaillée côte à côte de K3LK4L40DM-BGCT par Samsung Electronics et K3LK8K80CM-MFCP par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electronics
K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics
K3LK4L40DM-BGCT ✓ Actif
Comparaison des spécifications
| Paramètre | K3LK4L40DM-BGCT | K3LK8K80CM-MFCP |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | DRAM | Memory ICs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $40,50 | $0,00 |
| Type de mémoire | DRAM (SDRAM component) | LPDDR5 SDRAM |
| Manufacturer | Samsung Electronics | — |
| Density | [DATA_NEEDED: Density] | 48 Gbit (6 GB) |
| Organization (x-width) | [DATA_NEEDED: Organization] | — |
| Débit de données | [DATA_NEEDED: Data Rate] | — |
| Supply Voltage Class | [DATA_NEEDED: Supply Voltage] | — |
| Latence CAS | [DATA_NEEDED: CAS Latency] | — |
| Package Type | BGA (per -BGC ordering-code suffix) | — |
| Package Ball Count | [DATA_NEEDED: Ball Count] | — |
| Type de montage | Surface Mount | Surface Mount |
| Température de fonctionnement | [DATA_NEEDED: Operating Temperature Range] | -40 C to +105 C (automotive-grade) |
| Refresh Rate | [DATA_NEEDED: Refresh Interval] | — |
| Statut RoHS | [DATA_NEEDED: RoHS Status] | unknown |
| Lead Free | [DATA_NEEDED: Lead-Free Status] | — |
| Niveau MSL | [DATA_NEEDED: Moisture Sensitivity Level] | — |
| Packaging | Tape & Reel (per -T-style suffix convention) [DATA_NEEDED: confirmed packaging] | — |
| Organisation de la mémoire | — | [DATA_NEEDED: organization (x width)] |
| Pin Speed | — | 6400 Mbps |
| Data Rate (package) | — | 51.2 GB/s (family max) |
| Interface | — | LPDDR5 (JESD209-5 class low-power DRAM interface) |
| Boîtier | — | 315-ball FBGA (MFCP) |
| Ball Count | — | 315 |
| Tension d'alimentation | — | [DATA_NEEDED: VDD/VDDQ voltage] |
| Power Saving vs LPDDR4X | — | Approximately 20% |
| Generation | — | LPDDR5 (5th generation low-power DRAM) |
| Application Grade | — | Automotive-grade storage chip |
| Place of Origin | — | Johor, Malaysia |