K3LK8K80CM-MFCP vs K3LK4K40CM-BGCP Vergleich
Detaillierter Direktvergleich von K3LK8K80CM-MFCP von Samsung Electronics und K3LK4K40CM-BGCP von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K3LK8K80CM-MFCP | K3LK4K40CM-BGCP |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | DRAM |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $37,80 |
| Speichertyp | LPDDR5 SDRAM | LPDDR5 SDRAM |
| Density | 48 Gbit (6 GB) | 96 Gb (12 GB) |
| Speicherorganisation | [DATA_NEEDED: organization (x width)] | 1536M x 64 |
| Pin Speed | 6400 Mbps | — |
| Data Rate (package) | 51.2 GB/s (family max) | — |
| Schnittstelle | LPDDR5 (JESD209-5 class low-power DRAM interface) | LPDDR5 (JEDEC) |
| Gehäuse | 315-ball FBGA (MFCP) | 496-ball FBGA |
| Ball Count | 315 | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -40 C to +105 C (automotive-grade) | [DATA_NEEDED: Operating Temperature] |
| Versorgungsspannung | [DATA_NEEDED: VDD/VDDQ voltage] | — |
| Power Saving vs LPDDR4X | Approximately 20% | — |
| Generation | LPDDR5 (5th generation low-power DRAM) | — |
| Application Grade | Automotive-grade storage chip | — |
| Place of Origin | Johor, Malaysia | — |
| RoHS-Status | unknown | [DATA_NEEDED: RoHS Status] |
| Datenrate | — | 6400 Mbps per pin |
| Supply Voltage (VDD) | — | 1.05 V |
| Access Time / CAS Latency | — | [DATA_NEEDED: CAS Latency] |
| Refresh Scheme | — | Per-bank / all-bank refresh |
| Power-Down Modes | — | Deep sleep / power-down supported |
| Application Segment | — | Mobile, embedded, computing modules |
| Packaging | — | [DATA_NEEDED: standard packing quantity] |