K3LK8K80CM-MFCP vs K3LK4K40CM-BGCP 对比
详细并排对比 K3LK8K80CM-MFCP 出自 Samsung Electronics 和 K3LK4K40CM-BGCP 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K3LK8K80CM-MFCP | K3LK4K40CM-BGCP |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.00 | $37.80 |
| 存储器类型 | LPDDR5 SDRAM | LPDDR5 SDRAM |
| Density | 48 Gbit (6 GB) | 96 Gb (12 GB) |
| 存储组织 | [DATA_NEEDED: organization (x width)] | 1536M x 64 |
| Pin Speed | 6400 Mbps | — |
| Data Rate (package) | 51.2 GB/s (family max) | — |
| 接口 | LPDDR5 (JESD209-5 class low-power DRAM interface) | LPDDR5 (JEDEC) |
| 封装 | 315-ball FBGA (MFCP) | 496-ball FBGA |
| Ball Count | 315 | — |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -40 C to +105 C (automotive-grade) | [DATA_NEEDED: Operating Temperature] |
| 电源电压 | [DATA_NEEDED: VDD/VDDQ voltage] | — |
| Power Saving vs LPDDR4X | Approximately 20% | — |
| Generation | LPDDR5 (5th generation low-power DRAM) | — |
| Application Grade | Automotive-grade storage chip | — |
| Place of Origin | Johor, Malaysia | — |
| RoHS 状态 | unknown | [DATA_NEEDED: RoHS Status] |
| 数据速率 | — | 6400 Mbps per pin |
| Supply Voltage (VDD) | — | 1.05 V |
| Access Time / CAS Latency | — | [DATA_NEEDED: CAS Latency] |
| Refresh Scheme | — | Per-bank / all-bank refresh |
| Power-Down Modes | — | Deep sleep / power-down supported |
| Application Segment | — | Mobile, embedded, computing modules |
| Packaging | — | [DATA_NEEDED: standard packing quantity] |