K4A4G085WD-BCRC vs K4A4G045WD-BCRC Vergleich
Detaillierter Direktvergleich von K4A4G085WD-BCRC von Samsung Electronics und K4A4G045WD-BCRC von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K4A4G085WD-BCRC | K4A4G045WD-BCRC |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | DRAM |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,58 | $3,45 |
| Memory Density | 4 Gbit | — |
| Speicherorganisation | 512M x 8 | 1G x4 |
| Speichertyp | DDR4 SDRAM (D-die) | DDR4 SDRAM |
| Datenrate | 2400 Mb/s (PC2400) | — |
| Versorgungsspannung | 1.2 V | — |
| Gehäuse | FBGA-78 (TFBGA) | TFBGA-78 (FBGA-78) |
| Number of Terminals | 78 | 78 |
| Schnittstelle | Parallel | — |
| Access Mode | Multi-bank page burst | — |
| Montageart | Surface Mount | Surface Mount |
| CAS-Latenz | [DATA_NEEDED: CAS Latency] | [DATA_NEEDED: CL for BCRC bin] |
| Betriebstemperaturbereich | [DATA_NEEDED: Operating Temperature Range] | — |
| Refresh | [DATA_NEEDED: Refresh specification] | Self refresh supported (per Partstack listing) |
| RoHS-Status | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS status] |
| MSL-Level | [DATA_NEEDED: MSL Level] | — |
| Density | — | 4 Gb |
| Die Generation | — | D-die |
| Supply Voltage VDD | — | 1.2 V |
| Speed Grade / Data Rate | — | BCRC (2400 Mbps per Samsung product selection guide) |
| Self Refresh | — | Yes |
| Temperature Grade | — | [DATA_NEEDED: operating temperature range] |
| Clock Frequency | — | [DATA_NEEDED: CK frequency for BCRC bin] |
| Bank Architecture | — | DDR4 8 internal banks with bank groups |
| Lead Free Status | — | [DATA_NEEDED: lead-free status] |
| Packaging Option | — | [DATA_NEEDED: tape and reel quantity] |