K4A4G085WD-BCRC vs K4A4G045WD-BCRC 对比
详细并排对比 K4A4G085WD-BCRC 出自 Samsung Electronics 和 K4A4G045WD-BCRC 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A4G085WD-BCRC | K4A4G045WD-BCRC |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.58 | $3.45 |
| Memory Density | 4 Gbit | — |
| 存储组织 | 512M x 8 | 1G x4 |
| 存储器类型 | DDR4 SDRAM (D-die) | DDR4 SDRAM |
| 数据速率 | 2400 Mb/s (PC2400) | — |
| 电源电压 | 1.2 V | — |
| 封装 | FBGA-78 (TFBGA) | TFBGA-78 (FBGA-78) |
| Number of Terminals | 78 | 78 |
| 接口 | Parallel | — |
| Access Mode | Multi-bank page burst | — |
| 安装类型 | Surface Mount | Surface Mount |
| CAS 延迟 | [DATA_NEEDED: CAS Latency] | [DATA_NEEDED: CL for BCRC bin] |
| 工作温度范围 | [DATA_NEEDED: Operating Temperature Range] | — |
| Refresh | [DATA_NEEDED: Refresh specification] | Self refresh supported (per Partstack listing) |
| RoHS 状态 | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS status] |
| MSL 等级 | [DATA_NEEDED: MSL Level] | — |
| Density | — | 4 Gb |
| Die Generation | — | D-die |
| Supply Voltage VDD | — | 1.2 V |
| Speed Grade / Data Rate | — | BCRC (2400 Mbps per Samsung product selection guide) |
| Self Refresh | — | Yes |
| Temperature Grade | — | [DATA_NEEDED: operating temperature range] |
| Clock Frequency | — | [DATA_NEEDED: CK frequency for BCRC bin] |
| Bank Architecture | — | DDR4 8 internal banks with bank groups |
| Lead Free Status | — | [DATA_NEEDED: lead-free status] |
| Packaging Option | — | [DATA_NEEDED: tape and reel quantity] |