K4A4G085WD vs K4A4G085WG-BCWE Vergleich
Detaillierter Direktvergleich von K4A4G085WD von Samsung Electronics und K4A4G085WG-BCWE von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K4A4G085WD | K4A4G085WG-BCWE |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,05 | $2,68 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM (Volatile) |
| Die Generation | D-die | — |
| Density | 4 Gb | — |
| Speicherorganisation | 512M x 8 | — |
| Datenrate | Up to 2400 Mbps (speed-grade dependent) | 3200 Mbps/pin |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Gehäuse | 78-ball FBGA | FBGA-78 (BCW) |
| Montageart | Surface Mount | Surface Mount |
| Speed Grade (example) | -BCPB (DDR4-2400), -BCRC | — |
| Schnittstellentyp | DDR4 (double data rate, source-synchronous) | — |
| Bank Group Architecture | Yes (DDR4 bank groups) | — |
| ODT | On-Die Termination (built-in) | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| CAS Latency (typical) | [DATA_NEEDED: CL per speed grade] | — |
| Refresh | [DATA_NEEDED: refresh interval] | [DATA_NEEDED: refresh rate specification] |
| RoHS-Status | [DATA_NEEDED: RoHS status] | Compliant |
| Lead-Free | [DATA_NEEDED: lead-free status] | — |
| Speichergröße | — | 4 Gb |
| Memory Organization | — | 512M x 8 |
| Speed Class | — | DDR4-3200 |
| Technology | — | D-die DDR4 |
| Schnittstelle | — | Parallel (DDR4) |
| Burst Length | — | BL8 |
| DLL Mode | — | DLL Enabled (per datasheet timing) |
| Packaging | — | Tray |